Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Zi Li Xie"'
Autor:
Fei-Fan Xu, Tao Tao, Bin Liu, Xuan Wang, Mao-Gao Gong, Ting Zhi, Dan-Feng Pan, Zi-Li Xie, Yu-Gang Zhou, You-Dou Zheng, Rong Zhang
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 1, Pp 1-7 (2020)
Semi-polar micro-LEDs have gain increasing interests due to the advantages of polarization control and quantum efficiency improvement. In this work, a novel semi-polar (20-21)-plane micro-LEDs array has been designed and manufactured. In comparison w
Externí odkaz:
https://doaj.org/article/514823165d68408bb8e3c2c1ab163f7c
Publikováno v:
Microwave and Optical Technology Letters. 57:2774-2778
An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating ft/fmax of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 μm emitter and a composite collector. Base resistance Rbb of around 19 Ω was achieved to sustain a rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e20eb9de544515589c4c904cc25c4a
https://doi.org/10.1002/mop.29433
https://doi.org/10.1002/mop.29433
Autor:
L. Yu, Zi Li Xie, Xiang Qian Xiu, Jing Ping Dai, Li Qun Hu, Ping Han, Hong Zhao, Chen Peng, Cai Chuan Wu, Xiao Long He, Bin Liu, Shu Fan, Xue Fei Li, Dunjun Chen, Youdou Zheng, Xue Mei Hua, Rong Zhang
Publikováno v:
Advanced Materials Research. :391-395
The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d72ff1f75c30302b9929d06b7ee21f
https://doi.org/10.4028/www.scientific.net/amr.1120-1121.391
https://doi.org/10.4028/www.scientific.net/amr.1120-1121.391
Publikováno v:
Advanced Materials Research. :442-445
Heavily P type In0.51Ga0.49As was grown with hole concentration from 3.3E19cm-3 to 4.6E19cm-3. Standard (001) surface Raman backscattering geometry was used to measure samples. Two mode behavior and LO phonon-plasmon-coupled mode (LOPC) were observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8a7d4bbfc30a75b039b9a87451ab59
https://doi.org/10.4028/www.scientific.net/amr.887-888.442
https://doi.org/10.4028/www.scientific.net/amr.887-888.442
Autor:
F. Yu, Li Hong Cheng, Hong Zhao, Youdou Zheng, L. Yu, Xiang Qian Xiu, Z.Z. Lu, Zi Li Xie, Rui Zhang, Xiang Fu Zhao, Ping Han
Publikováno v:
Advanced Materials Research. :1568-1572
The Ge mole fraction (x) of Si1-xGexlayer was described by the C-V technique for Schottkey contact of single heterojunction Si1-xGex/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184f5c20b0a2147cd212c4818b9dfc65
https://doi.org/10.4028/www.scientific.net/amr.295-297.1568
https://doi.org/10.4028/www.scientific.net/amr.295-297.1568
Publikováno v:
IEEE Transactions on Consumer Electronics. 57:153-159
In this paper we design and implement a home embedded surveillance system with ultra-low alert power. Traditional surveillance systems suffer from an unnecessary waste of power and the shortcomings of memory conditions in the absence of invasion. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a96ade73e4f4cf6d3b68c8b20dba5b
https://doi.org/10.1109/tce.2011.5735496
https://doi.org/10.1109/tce.2011.5735496
Publikováno v:
IEEE Journal of Quantum Electronics. 45:575-578
AlGaN-based resonant-cavity-enhanced (RCE) p-i-n photodetectors (PDs) for operating at the wavelength of 330 nm were designed and fabricated. A 20.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector (DBR) was used as the back mirror and a 3-pair AlN/A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0b2c605a4e8f78c166a6113a0b1549
https://doi.org/10.1109/jqe.2009.2013146
https://doi.org/10.1109/jqe.2009.2013146
Publikováno v:
Materials Science Forum. :3753-3756
Fe films have been grown on different oriented Si substrates by metal organic chemical vapor deposition (MOCVD), and then samples are put in the air without any protection for nearly fifteen years. In this paper, using methods such as X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65dd976483dba1c200eada66b1af3d39
https://doi.org/10.4028/www.scientific.net/msf.475-479.3753
https://doi.org/10.4028/www.scientific.net/msf.475-479.3753
Publikováno v:
Materials Science Forum. :3717-3720
The MOCVD-growth and annealing of InN films have been studied in this work. The XRD spectra of InN films grown at 350 °C~500 °C indicate that the diffraction of In increases with increasing the growth temperature to 425 °C and the temperature high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b73a97a8dd8c2c56add564bd67e7921a
https://doi.org/10.4028/www.scientific.net/msf.475-479.3717
https://doi.org/10.4028/www.scientific.net/msf.475-479.3717
Autor:
Rong Zhang, S.L. Gu, Youdou Zheng, Huiqiang Yu, Zi Li Xie, Y.D. Ye, Yi Shi, Ben Shen, Lin Chen, Xiang Qian Xiu
Publikováno v:
Materials Science Forum. :3783-3786
GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fcf1dbc4da6bf368b5ef046a1495187
https://doi.org/10.4028/www.scientific.net/msf.475-479.3783
https://doi.org/10.4028/www.scientific.net/msf.475-479.3783