Výsledky vyhledávání - "Zhuorui Tang"

Akademický článek

Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

Autor: Zhuorui Tang, Shibo Zhao, Jian Li, Yuanhui Zuo, Jing Tian, Hongyu Tang, Jiajie Fan, Guoqi Zhang

Publikováno v: Case Studies in Thermal Engineering, Vol 59, Iss , Pp 104507- (2024)

This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined w

Externí odkaz: https://doaj.org/article/173aa09a172844379ca29aa739baf492

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Akademický článek

Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

Autor: Zhuorui Tang, Lin Gu, Hongping Ma, Kefeng Dai, Qian Luo, Nan Zhang, Jiyu Huang, Jiajie Fan

Publikováno v: Crystals, Vol 13, Iss 2, p 193 (2023)

The quality of the N-doped 4H-SiC homoepitaxial layers grown via hot-wall horizontal chemical vapor deposition (CVD) was evaluated at various C/Si ratios (1.0–1.2) and growth temperatures (1570–1630 °C). The microstructure and morphology of the

Externí odkaz: https://doaj.org/article/b2274110c1704306adde97f0a2bf7953

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Akademický článek

Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates

Autor: Zhuorui Tang, Lin Gu, Hongping Ma, Chaobin Mao, Sanzhong Wu, Nan Zhang, Jiyu Huang, Jiajie Fan

Publikováno v: Crystals, Vol 13, Iss 1, p 62 (2022)

The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the surfac

Externí odkaz: https://doaj.org/article/e2508b90af5e4229b4cb9acd0d6bc3f5

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Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Autor: Zhuorui Tang, Jing Tian, Chaobin Mao, Nan Zhang, Jiyu Huang, Jiajie Fan, Guoqi Zhang

Publikováno v: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::414f4ff0f5195bbdfab6a9d70eeb27a7
https://doi.org/10.1109/eurosime56861.2023.10100813

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Genetic Algorithm–Assisted Design of Redistribution Layer Vias for a Fan-Out Panel-Level SiC MOSFET Power Module Packaging

Autor: Jiajie Fan, Yichen Qian, Wei Chen, Jing Jiang, Zhuorui Tang, Xuejun Fan, Guoqi Zhang

Publikováno v: 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the rel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d07c7de855366e3069104307cd1fbd00
https://doi.org/10.1109/ectc51906.2022.00049

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