Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Zhuocheng Zhang"'
Autor:
Chang Niu, Zhuocheng Zhang, David Graf, Seungjun Lee, Mingyi Wang, Wenzhuo Wu, Tony Low, Peide D. Ye
Publikováno v:
Communications Physics, Vol 6, Iss 1, Pp 1-7 (2023)
Abstract Relativistic Weyl fermion quasiparticles in Weyl semimetal bring the electron’s chirality degree of freedom into the electrical transport and give rise to exotic phenomena. A topological phase transition from a topological trivial phase to
Externí odkaz:
https://doaj.org/article/1bfeb50b44d74da9bd391b8326f75fa5
Autor:
Qiushuo Sun, Lu Yu, Zhuocheng Zhang, Cheng Qian, Hongzhe Fang, Jintao Wang, Peipei Wu, Xiaojing Zhu, Jian Zhang, Liangjun Zhong, Rui He
Publikováno v:
Frontiers in Chemistry, Vol 10 (2022)
Hydroxyapatite (HA) and tricalcium phosphate (TCP) constitute 60% of the content of the bone, and their combination has a better effect on bone tissue engineering than either single element. This study demonstrates a new degradable gelatin/carboxymet
Externí odkaz:
https://doaj.org/article/ce0024b0cc2e492b9792730c238d2020
Autor:
Zhuocheng Zhang, Xiaoqiuyan Zhang, Min Hu, Tianyu Zhang, Xingxing Xu, Tao Zhao, Yanyu Wei, Yubin Gong, Shenggang Liu
Publikováno v:
Photonics, Vol 9, Iss 2, p 87 (2022)
Electrical gating has been typically used for Graphene-based devices to deliver high performance with superior electrical controllability. In this study, we utilize direct electron beam irradiation to attain the electrical controllability of graphene
Externí odkaz:
https://doaj.org/article/361643c93d3342c59c1799bd6e86b371
Autor:
Pai-Ying Liao, Dongqi Zheng, Sami Alajlouni, Zhuocheng Zhang, Mengwei Si, Jie Zhang, Jian-Yu Lin, Tatyana I. Feygelson, Marko J. Tadjer, Ali Shakouri, Peide D. Ye
Publikováno v:
IEEE Transactions on Electron Devices. 70:2052-2058
Publikováno v:
IEEE Electron Device Letters. 44:273-276
Autor:
Pai-Ying Liao, Krutarth Khot, Sami Alajlouni, Mike Snure, Jinhyun Noh, Mengwei Si, Zhuocheng Zhang, Ali Shakouri, Xiulin Ruan, Peide D. Ye
Publikováno v:
IEEE Transactions on Electron Devices. 70:113-120
Autor:
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, Sami Alajlouni, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye
Publikováno v:
IEEE Electron Device Letters. 43:1905-1908
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
IEEE Transactions on Electron Devices. 69:231-236