In(AsN) mid-infrared emission enhanced by rapid thermal annealing

Autor: Kesaria, M., Birindelli, S., Velichko, A.V., Zhuang, Q.D., Patanè, A., Capizzi, M., Krier, A.

Publikováno v: In Infrared Physics and Technology January 2015 68:138-142

Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

Autor: Yuan, K., Radhakrishnan, K. ^*, Zheng, H.Q., Zhuang, Q.D., Ing, G.I.

Publikováno v: In Thin Solid Films 2001 391(1):36-41

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Autor: Zhuang, Q.D ^*, Yoon, S.F, Zheng, H.Q, Yuan, K.H

Publikováno v: In Journal of Crystal Growth 15 June 2000 216(1-4):57-61

Antimonide Quantum Dot Nanostructures for Novel Photonic Device Applications

Autor: Krier, A., Carrington, P.J., Zhuang, Q.D., Young, R.J., Hayne, M., Qi, L., James, J., Wagener, M.C., Botha, J.R., Koenraad, P.M., Smakman, E.P., Razeghi, M., Esaki, L., Klitzing, von, K.

Publikováno v: The wonder of nanotechnology : quantum optoelectronic devices and applications, 133-156
STARTPAGE=133;ENDPAGE=156;TITLE=The wonder of nanotechnology : quantum optoelectronic devices and applications

The 3D confinement of carriers in quantum dot (QD) structures offers an attractive alternative compared with bulk or quantum well (QW) structures for optoelectronic devices because of the improved (d-like) density of states (DOS) leading to higher ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b4aea951ecf069b3341fad4aab9f2aa
https://doi.org/10.1117/3.1002245.ch6

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Autor: Zhuang, Q.D ^*, Li, J.M, Zeng, Y.P, Yoon, S.F, Zheng, H.Q, Kong, M.Y, Lin, L.Y

Publikováno v: In Journal of Crystal Growth 2000 212(1):352-355