Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Zhuang, Q.D."'
Autor:
Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Kamarudin, M.A., Zhuang, Q.D., Hayne, M., Molina, S.I.
Publikováno v:
In Applied Surface Science 15 February 2017 395:136-139
Autor:
Kesaria, M., Birindelli, S., Velichko, A.V., Zhuang, Q.D., Patanè, A., Capizzi, M., Krier, A.
Publikováno v:
In Infrared Physics and Technology January 2015 68:138-142
Autor:
Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, Po-Wei, Tsai, G.
Publikováno v:
In Thin Solid Films 2008 516(22):8049-8058
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2001 11(4):384-390
Publikováno v:
In Thin Solid Films 2001 391(1):36-41
Publikováno v:
In Solid State Communications 2001 117(8):465-469
Publikováno v:
In Journal of Crystal Growth 2001 227:1084-1088
Publikováno v:
In Journal of Crystal Growth 15 June 2000 216(1-4):57-61
Publikováno v:
In Journal of Crystal Growth 1999 200(3):375-381
Autor:
Krier, A., Carrington, P.J., Zhuang, Q.D., Young, R.J., Hayne, M., Qi, L., James, J., Wagener, M.C., Botha, J.R., Koenraad, P.M., Smakman, E.P., Razeghi, M., Esaki, L., Klitzing, von, K.
Publikováno v:
The wonder of nanotechnology : quantum optoelectronic devices and applications, 133-156
STARTPAGE=133;ENDPAGE=156;TITLE=The wonder of nanotechnology : quantum optoelectronic devices and applications
STARTPAGE=133;ENDPAGE=156;TITLE=The wonder of nanotechnology : quantum optoelectronic devices and applications
The 3D confinement of carriers in quantum dot (QD) structures offers an attractive alternative compared with bulk or quantum well (QW) structures for optoelectronic devices because of the improved (d-like) density of states (DOS) leading to higher ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b4aea951ecf069b3341fad4aab9f2aa
https://doi.org/10.1117/3.1002245.ch6
https://doi.org/10.1117/3.1002245.ch6
