Zobrazeno 1 - 10
of 452
pro vyhledávání: '"Zhu, Zhifeng"'
Publikováno v:
Appl. Phys. Lett. 125, 182403 (2024)
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show that by u
Externí odkaz:
http://arxiv.org/abs/2411.06379
Publikováno v:
Journal of Magnetism and Magnetic Materials 611 (2024) 172614
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable magnetization sw
Externí odkaz:
http://arxiv.org/abs/2411.06321
Noncollinear chiral antiferromagnets, such as Mn3X (X = Sn, Ge), have garnered significant interest in spintronics due to their topologically protected Weyl nodes and large momentum-space Berry curvatures. In this study, we report rapid chirality dom
Externí odkaz:
http://arxiv.org/abs/2409.18554
Revisiting the Analytical Solution of Spin-Orbit Torque Switched Nanoscale Perpendicular Ferromagnet
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of perpendicular magnet.
Externí odkaz:
http://arxiv.org/abs/2408.13703
Autor:
Cheng, Long, Bao, Mingrui, Zhang, Jingxian, Zhang, Xue, Yang, Qun, Li, Qiang, Cao, Hui, Qiu, Dawei, Liu, Jia, Ye, Fei, Wang, Qing, Liang, Genhao, Li, Hui, Cheng, Guanglei, Zhou, Hua, Zuo, Jian-Min, Zhou, Xiaodong, Shen, Jian, Zhu, Zhifeng, Mu, Sai, Wang, Wenbo, Zhai, Xiaofang
Chirality in solid-state materials has sparked significant interest due to potential applications of topologically-protected chiral states in next-generation information technology. The electrical magneto-chiral effect (eMChE), arising from relativis
Externí odkaz:
http://arxiv.org/abs/2404.13396
Publikováno v:
Appl. Phys. Lett. 124, 012405 (2024)
Ferrimagnet (FiM), (FeCo)1-xGdx, attracts research attention due to its ultrafast magnetic dynamics and finite net magnetization. Incorporating FiM into the magnetic tunnel junction will be beneficial to further improve the writing speed of magnetic
Externí odkaz:
http://arxiv.org/abs/2401.01741
Autor:
Zhang, Lishu, Yuan, Zhengping, Yang, Jie, Zhou, Jun, Jiang, Yanyan, Li, Hui, Cai, Yongqing, Feng, Yuan Ping, Zhu, Zhifeng, Shen, Lei
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from the metal
Externí odkaz:
http://arxiv.org/abs/2310.02805
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($ J_{crit}$=$ 10^{14}$
Externí odkaz:
http://arxiv.org/abs/2308.08091
Autor:
Yuan, Zhengping, Long, Jingwei, Xu, Zhengde, Xin, Yue, An, Lihua, Ren, Jie, Zhang, Xue, Yang, Yumeng, Zhu, Zhifeng
Publikováno v:
Journal of Applied Physics 133, 153903 (2023)
The dynamics of a spin torque driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate an ultrafast switching in the picosecond range. However, we find that the excessive current leads to the magnetic
Externí odkaz:
http://arxiv.org/abs/2304.08765
Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved after the de
Externí odkaz:
http://arxiv.org/abs/2303.08378