Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Zhongzhong Luo"'
Autor:
Fengshun Wang, Lingbin Xie, Ning Sun, Ting Zhi, Mengyang Zhang, Yang Liu, Zhongzhong Luo, Lanhua Yi, Qiang Zhao, Longlu Wang
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-25 (2023)
Highlights The main effects of deformation of flexible catalytic materials on the catalytic hydrogen evolution reaction performance are discussed, and a series of novel strategies to design highly active catalysts based on the mechanical flexibility
Externí odkaz:
https://doaj.org/article/67e0e79b097c4076a44c8e24f17829cb
Autor:
Fulin Zhuo, Jie Wu, Binhong Li, Moyang Li, Chee Leong Tan, Zhongzhong Luo, Huabin Sun, Yong Xu, Zhihao Yu
Publikováno v:
Research, Vol 6 (2023)
Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor tech
Externí odkaz:
https://doaj.org/article/f6d7920bd98d47b18afc5dc0ab0c9c76
Autor:
Zhongzhong Luo, Boyu Peng, Junpeng Zeng, Zhihao Yu, Ying Zhao, Jun Xie, Rongfang Lan, Zhong Ma, Lijia Pan, Ke Cao, Yang Lu, Daowei He, Hongkai Ning, Wanqing Meng, Yang Yang, Xiaoqing Chen, Weisheng Li, Jiawei Wang, Danfeng Pan, Xuecou Tu, Wenxing Huo, Xian Huang, Dongquan Shi, Ling Li, Ming Liu, Yi Shi, Xue Feng, Paddy K. L. Chan, Xinran Wang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Exploiting negative capacitance effects in organic thin-film transistors (OTFTs) is advantageous for enhancing device performance. Here, the authors report solution-processed sub-thermionic OTFTs and circuits with ferroelectric hafnium oxides that sh
Externí odkaz:
https://doaj.org/article/c28cfc85934841b4bb20c0a57d71d439
Autor:
Xi Chen, Bo Yu, Jiawei Wang, Zhongzhong Luo, Haixing Meng, Boming Xie, Ruyi Zhou, Shujuan Liu, Qiang Zhao
Publikováno v:
Journal of Materials Chemistry C. 11:2267-2272
A near-infrared aza-BODIPY dye is developed for organic photodetectors. The device achieves a high D* value and a fast-response speed of 0.5 μs. Importantly, our work innovatively utilizes the high-performance NIR OPD in the laser microphone system.
Publikováno v:
Advanced Materials Technologies.
Autor:
Zhongzhong Luo, Xiangxiang Song, Xiaolong Liu, Xiangqian Lu, Yu Yao, Junpeng Zeng, Yating Li, Daowei He, Huijuan Zhao, Li Gao, Zhihao Yu, Wei Niu, Huabin Sun, Yong Xu, Shujuan Liu, Wei Qin, Qiang Zhao
Publikováno v:
Science Advances. 9
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintr
Autor:
Linglong, Zhang, Yilin, Tang, Han, Yan, Tanju, Yildirim, Shunshun, Yang, Haizeng, Song, Xiaowei, Zhang, Fuguo, Tian, Zhongzhong, Luo, Jiajie, Pei, Qi, Yang, Yixin, Xu, Xiaoying, Song, Ahmed Raza, Khan, Sihao, Xia, Xueqian, Sun, Bo, Wen, Fei, Zhou, Weiwei, Li, Youwen, Liu, Han, Zhang
Publikováno v:
Nanoscale. 14(23)
Monolayer transition metal dichalcogenides (mTMDs) possess a direct band gap and strong PL emission that is highly sensitive to doping level and interfaces, laying the foundation for investigating the contact between mTMD and metal
Autor:
Zhongzhong Luo, Yu Yao, Mingshan Liang, Fuguo Tian, Huabin Sun, Yong Xu, Qiang Zhao, Zhihao Yu
Publikováno v:
Nanotechnology. 34:27LT01
Ferroelectric transistors hold great potential in low consumption devices. Due to the high film quality and clean system, two dimensional organic semiconductors are widely employed to fabricate high performance organic electronic devices and explore
Autor:
Xiaolong Liu, Songyuan Dai, Xiaoqing Chen, Juxia Yi, Hui Guo, Zhongzhong Luo, Yong Ding, Zhenhua Ni, Xinran Wang, Haiyan Nan
Publikováno v:
Organic Electronics. 64:22-26
Benefited from the advantages of light sensitivity of organic materials and high carrier mobility of graphene, organic semiconductor/graphene hybrid phototransistors exhibit ultrahigh photoconductive gain and photoresponsivity, attributed to the carr
Autor:
Weisheng Li, Xinran Wang, Lei Liu, Hongkai Ning, Wanqing Meng, Zhongzhong Luo, Taotao Li, Peng Wang, Songhua Cai, Yong Xu, Zhihao Yu, Yi Shi
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Due to the absence of dangling bonds, the integration of ultra-thin dielectric on 2D semiconductors has become a huge challenge, and its reliability research has been blank before. For the first time, we report the high $-\mathcal{K}$ dielectric reli