Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Zhongquan Ma"'
Autor:
Yilin Xu, Haojian Yu, Cong Wang, Jin Cao, Yigang Chen, Zhongquan Ma, Ying You, Jixiang Wan, Xiaohong Fang, Xiaoyuan Chen
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract Graphene is a promising candidate for the replacement of the typical transparent electrode indium tin oxide in optoelectronic devices. Currently, the application of polycrystalline graphene films grown by chemical vapor deposition is limited
Externí odkaz:
https://doaj.org/article/61b7f03e0b0547658b1b724854239b5b
Autor:
Yilin Wang, Zixuan Lan, Fei Xu, Lei Zhao, Jing Xu, Jia Chen, Ronglin Liu, Zheren Du, Huiwei Du, Zhongquan Ma
Publikováno v:
ACS Applied Electronic Materials. 4:3947-3954
Publikováno v:
Ceramics International. 46:2940-2948
Tremendous progress has been made in power conversion efficiency (PCE) of thin-film photovoltaics over the past few years, yet most current high-efficient photoactive layer usually contains rare or toxic elements accompanied by expensive and complica
Autor:
Feng Hong, Liming Wang, Lingling Zheng, Shujie Li, Zuimin Jiang, Beng Jiang, Zhongquan Ma, Fei Xu, Zuoru Dong, Lei Zhao, Z. G. Hu, Run Xu
Publikováno v:
The Journal of Physical Chemistry C. 124:3747-3755
Broadband emission of 1400–2100 nm is achieved in Er–Tm codoped ZnO (ETZO) films at an excitation of photon energies higher than the band gap of ZnO. Room temperature (RT) and temperature-dependent...
Autor:
Fei Xu, Xiang Wang, Yue Li, Beng Jiang, Zuoru Dong, Zichen Yang, Jiaxing Kang, Xin Shu, Zuimin Jiang, Feng Hong, Run Xu, Zhongquan Ma, Teng Chen, Zhan Xu, Haitao Xu
Publikováno v:
Advanced Optical Materials. 10:2270069
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
There is no doubt that silicon-based solar cells provide continuous power to space vehicles, but exposure to high-energy particle irradiation and large temperature differences are two challenges. In this report, the temperature effects of the crystal
Publikováno v:
Applied Surface Science. 473:20-24
An amorphous silica layer containing Mo component (a-SiOx(Mo) ∼ 3.5–4.0 nm) is naturally formed in the process of evaporating MoO3 power onto n-type silicon, which plays a significant role on the non-equilibrium carriers’ transport of MoOx/n-Si
Publikováno v:
Chemistry Letters.
A black phase CsPbI2Br film was prepared by mesophase transformation strategy in air atmosphere, and a methylamine acetate vapor-assisted annealing method was applied. The CsPbI2Br film exhibits a ...
Publikováno v:
Proceedings of the ISES Solar World Congress 2021.
Publikováno v:
Applied Surface Science. 579:152113