Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Zhongnan Guo"'
Autor:
Ruonan Yao, Jiawei Lin, Kunjie Liu, Yuanchang Xu, Boyi Xiao, Jing Zhao, Zhongnan Guo, Quanlin Liu, Wenxia Yuan
Publikováno v:
ACS Omega, Vol 9, Iss 20, Pp 22352-22359 (2024)
Externí odkaz:
https://doaj.org/article/bc249636340340179877d5b9d896b170
Autor:
Long Chen, Ying Zhou, He Zhang, Xuecong Ji, Ke Liao, Yu Ji, Ying Li, Zhongnan Guo, Xi Shen, Richeng Yu, Xiaohui Yu, Hongming Weng, Gang Wang
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-9 (2024)
Abstract Rare-earth engineering is an effective way to introduce and tune magnetism in topological kagome materials, which have been acting as a fertile platform to investigate the quantum interactions between geometry, topology, spin, and correlatio
Externí odkaz:
https://doaj.org/article/8b0962b41d564e7da8b6ca3c9017ebf8
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027119-027119-8 (2015)
In this work, we have demonstrated a different effect on Fe1+σTe0.5Se0.5 and β-FeSe by changing the quenching temperature. Tc is clearly reduced in Fe1+σTe0.5Se0.5 after increasing the quenching temperature from 300 °C to 500 °C, while that of
Externí odkaz:
https://doaj.org/article/094fb57db91e4e859fc64851b999bbda
Autor:
Ying Zhou, Long Chen, Yuxin Wang, Jinfeng Zhu, Zhongnan Guo, Chen Liu, Zhiying Guo, ChinWei Wang, Han Zhang, Yulong Wang, Ke Liao, Youting Song, Jia-ou Wang, Dongliang Chen, Jie Ma, Jiangping Hu, Gang Wang
Publikováno v:
Inorganic Chemistry. 62:3788-3798
Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions
Autor:
Guobin Wang, Da Sheng, Hui Li, Zesheng Zhang, Lingling Guo, Zhongnan Guo, Wenxia Yuan, Wenjun Wang, Xiaolong Chen
Publikováno v:
CrystEngComm. 25:560-566
Al addition modifies the interfacial energy of SiC/solution during the growth of SiC single crystals via TSSG, and is beneficial to smoothing the growth surface, improving the crystalline quality, stabilizing the 4H polytype, and increasing the growt
Autor:
Yafang Li, Wang Li, Jiawei Lin, Zhongnan Guo, Fan Sun, Xin Chen, Yubo Luo, Junyou Yang, Wenxia Yuan
Publikováno v:
The Journal of Physical Chemistry C. 126:7230-7237
Publikováno v:
Inorganic Chemistry. 61:4592-4597
Autor:
Xiaojing Feng, Zhiqi Li, Guangda Chen, Haoyu Yue, Yan Gao, Xiankun Zhang, Zhongnan Guo, Wenxia Yuan
Publikováno v:
CrystEngComm; 10/14/2023, Vol. 25 Issue 38, p5399-5404, 6p
Autor:
Jindong Cao, Jiawei Lin, Kunjie Liu, Yan Xiong, Na Wang, Shihui He, Xusheng Zhang, Zhongnan Guo, Xin Chen, Jing Zhao, Quanlin Liu
Publikováno v:
Journal of Materials Chemistry C. 10:9841-9848
The incorporation of Sb3+ greatly enhanced the photoluminescence quantum yield of (TMEDA)3Bi2Cl12·H2O from 1% to 38%, the yellow emission originates from the relatively distant highly distorted inorganic octahedra in the structure.
Publikováno v:
Journal of Materials Chemistry C. 10:5905-5913
We report a new 0D lead-free halide with both [InBr6]3− octahedra and [InBr4]− tetrahedra as inorganic units. High-efficiency red photoluminescence can be achieved via Sb doping in this emissive material with a PLQY of 61%.