Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Zhonghao Du"'
Autor:
Yunwei Ma, Ming Xiao, Zhonghao Du, Lei Wang, Eric Carlson, Louis Guido, Han Wang, Lai Wang, Yi Luo, Yuhao Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4224-4230
Autor:
Ming Xiao, Yunwei Ma, Zhonghao Du, Yuan Qin, Kai Liu, Kai Cheng, Florin Udrea, Andy Xie, Edward Beam, Boyan Wang, Joseph Spencer, Marko Tadjer, Travis Anderson, Han Wang, Yuhao Zhang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Hefei Liu, Yuan Qin, Hung‐Yu Chen, Jiangbin Wu, Jiahui Ma, Zhonghao Du, Nan Wang, Jingyi Zou, Sen Lin, Xu Zhang, Yuhao Zhang, Han Wang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Artificial neuronal devices are critical building blocks of neuromorphic computing systems and currently the subject of intense research motivated by application needs from new computing technology and more realistic brain emulation. Researchers have
Publikováno v:
IEEE Transactions on Electron Devices. 68:4854-4861
We present the physics and performance space of the tri-gate GaN junction high electron mobility transistor (Tri-JHEMT), a new tri-gate GaN device proposed recently. In Tri-JHEMTs, p-n junctions wrap around two-dimensional-electron-gas (2DEG) fins in
Publikováno v:
Xibei Gongye Daxue Xuebao, Vol 39, Iss 2, Pp 454-461 (2021)
With the development of 5th-generation(5G) wireless systems and internet of things(IoT), high speed wireless communications are facing severe challenges due to numerous connections of communication terminals and limited frequency resources. Intellige
Autor:
Jiangbin Wu, Yu Yao, Miao‐Ling Lin, Malte Rösner, Zhonghao Du, Kenji Watanabe, Takashi Taniguchi, Ping‐Heng Tan, Stephan Haas, Han Wang
Publikováno v:
Advanced Materials, 34, 20, pp. 1-8
Advanced Materials, 34, 1-8
Advanced Materials, 34, 1-8
Novel 2D magnets exhibit intrinsic electrically tunable magnetism down to the monolayer limit, which has significant value for nonvolatile memory and emerging computing device applications. In these compounds, spin-phonon coupling (SPC) typically pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f70fe5d4c29ccfa5465a2faf7bb97034
https://repository.ubn.ru.nl/handle/2066/249285
https://repository.ubn.ru.nl/handle/2066/249285
Autor:
Zhonghao Du, Kai Cheng, Ivan I. Kravchenko, Yuhao Zhang, Lei Tao, Yunwei Ma, Ming Xiao, Xiaodong Yan, Mantu K. Hudait, Feng Lin, Han Wang, Michael Clavel
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The lack of reports on the high-temperature performance of tri-gate GaN power HEMTs has raised serious concern on their competitiveness. This work demonstrates the first normally-off tri-gate GaN HEMT that can block kilovolts at 150 °C and zero gate
Autor:
Jiang-Bin Wu, Shanyuan Niu, Huan Zhao, Ping-Heng Tan, Xin Cong, Han Wang, Fanxin Liu, Zhonghao Du, Jayakanth Ravichandran
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(33)
Anisotropic photonic materials with linear dichroism are crucial components in many sensing, imaging, and communication applications. Such materials play an important role as polarizers, filters, and waveplates in photonic devices and circuits. Conve
Autor:
Yunwei Ma, Ming Xiao, Mantu K. Hudait, Zhonghao Du, Yuhao Zhang, Xiaodong Yan, Han Wang, Kai Cheng, Ivan I. Kravchenko, Michael Clavel
Publikováno v:
Applied Physics Letters. 117:143506
This work presents a tri-gate GaN junction high-electron-mobility transistor (JHEMT) concept in which the p–n junction wraps around the AlGaN/GaN fins in the gate region. This tri-gate JHEMT differs from all existing GaN FinFETs and tri-gate HEMTs,
Autor:
Jinqiao Xie, Edward Beam, Xiaodong Yan, Zhonghao Du, Ming Xiao, Yuhao Zhang, Kai Cheng, Han Wang, Yu Cao
Publikováno v:
Applied Physics Letters. 116:053503
This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize t