Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Zhonghan Deng"'
Autor:
Bohan Zhang, Mei Li, Qiang Kang, Zhonghan Deng, Hua Qin, Kui Su, Xiuwen Feng, Lichuan Chen, Huanlin Liu, Shuangsang Fang, Yong Zhang, Yuxiang Li, Susanne Brix, Xun Xu
Publikováno v:
GigaByte (2024)
In spatially resolved transcriptomics, Stereo-seq facilitates the analysis of large tissues at the single-cell level, offering subcellular resolution and centimeter-level field-of-view. Our previous work on StereoCell introduced a one-stop software u
Externí odkaz:
https://doaj.org/article/f7a2306a91f3404db2f956cdaa13b0f2
Autor:
Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Yu Wu, Dongqing Hu, Xingyu Fang, Zhonghan Deng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 839-845 (2021)
A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with the conventional SGT MOSFET (C-SGT MOS) and conventional SGT M
Externí odkaz:
https://doaj.org/article/ac524d95b4644f44b857ea72fa796904
Autor:
Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Xingyu Fang, Guo Jia, Zhonghan Deng
Publikováno v:
IEEE Transactions on Electron Devices. 70:2947-2955
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4a219c5563a7981093c0bca9c9722c
https://doi.org/10.1109/ted.2023.3269408
https://doi.org/10.1109/ted.2023.3269408
Publikováno v:
Japanese Journal of Applied Physics. 62:044002
In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n-type SiC HD is introduced into the groove by the direct contact between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16951c4405b0901c5701ec6ca57848ee
https://doi.org/10.35848/1347-4065/accb22
https://doi.org/10.35848/1347-4065/accb22
Autor:
Yu Wu, Xintian Zhou, Yunpeng Jia, Xinyu Li, Dongqing Hu, Xingyu Fang, Zhonghan Deng, Yuanfu Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 839-845 (2021)
A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with the conventional SGT MOSFET (C-SGT MOS) and conventional SGT M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e40320fb3e949d594b30af3132d5e3c6
https://ieeexplore.ieee.org/document/9542929/
https://ieeexplore.ieee.org/document/9542929/
Publikováno v:
Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ee33e8f62bb7f7199cb40c58643c69
https://doi.org/10.1145/3501409.3501451
https://doi.org/10.1145/3501409.3501451
Autor:
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Dongqing Hu, Yu Wu, Zhonghan Deng
Publikováno v:
Microelectronics Reliability. 137:114770
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6df4c5925a0db5cfbd4a367649608169
https://doi.org/10.1016/j.microrel.2022.114770
https://doi.org/10.1016/j.microrel.2022.114770
Publikováno v:
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED).
In this paper, an experimental characterization of the behavior of commercial 200V/48A Enhancement-mode GaN HEMTs under heavy ion irradiation is presented. The damage caused by SEE may cumulative and permanent, which makes the drain leakage current g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2892f19ccd9c18e2926f07c3e86841f8
https://doi.org/10.1109/icreed52909.2021.9588747
https://doi.org/10.1109/icreed52909.2021.9588747
Autor:
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Dongqing Hu, Yu Wu, Liang Wang, Tongde Li, Zhonghan Deng
Publikováno v:
Microelectronics Reliability. 133:114545
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca675927a1b76ff084c33b503de98ef6
https://doi.org/10.1016/j.microrel.2022.114545
https://doi.org/10.1016/j.microrel.2022.114545
Autor:
Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Xingyu Fang, Liang Wang, Guo Jia, Zhonghan Deng
Publikováno v:
Microelectronics Reliability. 132:114529
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055d16a0783e52baa49fe875158aad5b
https://doi.org/10.1016/j.microrel.2022.114529
https://doi.org/10.1016/j.microrel.2022.114529