Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Zhonghai Shi"'
Publikováno v:
Solid-State Electronics. 48:2299-2306
P-channel metal-oxide-semiconductor field-effect-transistors (PMOSFETs) with a Si 1− x Ge x /Si heterostructure channel were fabricated. Peak mobility enhancement of about 41% in Si 1− x Ge x channel PMOSFETs was observed compared to Si channel P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ef236c170ec7f29a5038481f13532f
https://doi.org/10.1016/j.sse.2004.04.016
https://doi.org/10.1016/j.sse.2004.04.016
Publikováno v:
Applied Surface Science. 224:248-253
We report that drive current enhancement and higher mobilities than the universal mobility in compressively strained Si1−xGex on Si surface-channel p-type metal-oxide–semiconductor field-effect-transistors (PMOSFETs) with HfO2 gate dielectric, fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eae71ced8ea0062985cd2b91d193885
https://doi.org/10.1016/j.apsusc.2003.08.110
https://doi.org/10.1016/j.apsusc.2003.08.110
Publikováno v:
Solid-State Electronics. 48:379-387
Si1−yCy alloy layers deposited on (1 0 0) Si form a tensile-strained layer, similar to strained-Si on a relaxed SiGe buffer. We present the results of fabrication of heterojunction metal oxide semiconductor field effect transistor (MOSFET) devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e5a76205581f7878a3e6e441b1f92d
https://doi.org/10.1016/j.sse.2003.09.003
https://doi.org/10.1016/j.sse.2003.09.003
Publikováno v:
Journal of Electronic Materials. 32:1171-1181
Nickel-silicide phase formation in the Ni/Si and Ni/Si1−xGex (x=0.20) systems and its correlation with variations in sheet resistance have been studied using high-resolution transmission electron microscopy (HRTEM) and related techniques. Following
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94612f6956a83ba9eca2fd0eabaa8103
https://doi.org/10.1007/s11664-003-0008-3
https://doi.org/10.1007/s11664-003-0008-3
Publikováno v:
Solid-State Electronics. 44:1223-1228
Deep submicron (0.35 μm) strained Si1−xGex buried channel p-MOSFETs with a Ge concentration up to 50% were simulated using the MEDICI device simulator. A buried channel structure offers several benefits over a surface channel structure without a S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c52ccfcd6f0ec8f378ae62a9dba01df
https://doi.org/10.1016/s0038-1101(00)00031-9
https://doi.org/10.1016/s0038-1101(00)00031-9
Publikováno v:
IEEE Electron Device Letters. 24:34-36
We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs with HfO/sub 2/ gate dielectrics, for gate len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c55584d3fdaa948c2857f6b188d6a2
https://doi.org/10.1109/led.2002.807020
https://doi.org/10.1109/led.2002.807020
Autor:
Raj Rai, Zhonghai Shi, Byoung W. Min, David Burnett, Rode R. Mora, J. Saenz, Michael A. Sadd, L. Prabhu, G. Ablen, Bich-Yen Nguyen, M.M. Chowdhury, S. Kalpat, D. Sing, Tab A. Stephens, R. Shinier, M. Zavala, G.O. Workman, Jerry G. Fossum, Colita Parker, W. Zhang, Leo Mathew, J. Mogab, J. Vasek
Publikováno v:
2006 IEEE International Conference on IC Design and Technology.
The ITFET is novel device architecture; it offers significant advantages over planar and FinFET technologies. The ITFET uses traditional CMOS processing technologies and can be rapidly inserted into existing SOI process flows. Doped channel ITFET dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ad3751852ced118a2c2cf9d8f5e511e
https://doi.org/10.1109/icicdt.2006.220809
https://doi.org/10.1109/icicdt.2006.220809
Autor:
A. Vandooren, Ted R. White, Raj Rai, M. Zalava, Aaron Thean, R. Noble, B. Xie, L. Prabhu, Yang Du, Veer Dhandapani, S. Kalpat, Alexander L. Barr, X.-D. Wang, Da Zhang, Michael A. Sadd, Mariam Sadaka, James K. Schaeffer, T. Nguyen, M. Ramon, Marius K. Orlowski, J. Mogab, Vidya Kaushik, S. Samavedam, D. Eades, Brian J. Goolsby, Michael A. Mendicino, Thuy B. Dao, Zhonghai Shi, Dina H. Triyoso, Ran Liu, Stefan Zollner, T. Stephen, Philip J. Tobin, Leo Mathew, Victor H. Vartanian, S. Venkatesan, Bich-Yen Nguyen, J. Jiang, Shawn G. Thomas
Publikováno v:
Scopus-Elsevier
In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19c75e058af9a0cb895bb4daa8962a36
https://doi.org/10.1109/icicdt.2004.1309953
https://doi.org/10.1109/icicdt.2004.1309953
Publikováno v:
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
The growth of high quality strained SiGe-Si and SiGeC-Si heterostructures allows incorporation of band gap engineering into Si technology, which can be used to improve device characteristics. A heterojunction MOSFET (HJMOSFET) structure has been prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::242f506531f05a8cd0405a64d1de62ca
https://doi.org/10.1109/drc.2000.877073
https://doi.org/10.1109/drc.2000.877073
Publikováno v:
IEEE Electron Device Letters; Jan2003, Vol. 24 Issue 1, p34, 3p, 1 Chart, 4 Graphs