Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Zhongguang Xu"'
Autor:
Alireza Khanaki, Zhongguang Xu, Hao Tian, Renjing Zheng, Zheng Zuo, Jian-Guo Zheng, Jianlin Liu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic appl
Externí odkaz:
https://doaj.org/article/0db4ca40a6c24e709631cddad100c857
Autor:
Protik Das, Renjing Zheng, Jianlin Liu, Wenhao Shi, Zhenjun Cui, Yanwei He, Zhongguang Xu, Alireza Khanaki, Hao Tian, Roger K. Lake
Publikováno v:
Nano Letters. 18:3352-3361
Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon
Autor:
Renjing Zheng, Alireza Khanaki, Hao Tian, Jian-Guo Zheng, Zheng Zuo, Zhongguang Xu, Jianlin Liu
Publikováno v:
Thin Solid Films. 627:39-43
Graphene has attracted a great deal of interest due to its fascinating properties and a wide variety of potential applications. Several methods have been used to achieve high-quality graphene films on different substrates. However, there have been on
Autor:
Zheng Zuo1, Zhongguang Xu1, Renjing Zheng1, Khanaki, Alireza1, Jian-Guo Zheng2, Jianlin Liu1 jianlin@ece.ucr.edu
Publikováno v:
Scientific Reports. 10/9/2015, p1-6. 6p.
Autor:
Hao Tian, Renjing Zheng, Jianlin Liu, Zheng Zuo, Jian-Guo Zheng, Alireza Khanaki, Zhongguang Xu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Scientific Reports
Scientific Reports
One of the low-dimensional Boron Nitride (BN) forms, namely, cubic-BN (c-BN) nanodots (NDs), offers a variety of novel opportunities in battery, biology, deep ultraviolet light emitting diodes, sensors, filters, and other optoelectronic applications.
Publikováno v:
Scientific Reports
Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, lar
Publikováno v:
Scientific Reports
Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der
Autor:
Renjing Zheng, Alireza Khanaki, Zhongguang Xu, Jingchuan Yang, Yanwei He, Jianlin Liu, Hao Tian, Zhenjun Cui
Publikováno v:
Nanotechnology. 29:035602
We carried out a systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed by boron and nitrogen sources in a molecula
Autor:
Zhongguang Xu, Renjing Zheng, Jianlin Liu, Yong-Tao Cui, Alireza Khanaki, Yanwei He, Hao Tian
Publikováno v:
Applied Physics Letters. 111:011903
Research on graphene/hexagonal boron nitride (h-BN) heterostructures has attracted much attention for band engineering and device performance optimization of graphene. However, the growth of graphene/h-BN heterostructure is still challenging, which u
Autor:
Hao Tian, Khanaki, Alireza, Das, Protik, Renjing Zheng, Zhenjun Cui, Yanwei He, Wenhao Shi, Zhongguang Xu, Lake, Roger, Jianlin Liu
Publikováno v:
Nano Letters; 6/13/2018, Vol. 18 Issue 6, p3352-3361, 10p