Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Zhong-Xiang He"'
Autor:
Rui, Wang, Hai, Deng, Zhong-Min, Jia, Ming-Shu, Yan, Jiao, Zhou, Zhong-Xiang, He, Shao-Biao, Liang, Jin-Xiu, Dong, Li-Ming, Su
Publikováno v:
Huan jing ke xue= Huanjing kexue. 41(12)
In order to determine the distribution characteristics of Se in soil-crop systems, we carried out a study on the Se-rich soil threshold by collecting 8789 surface soils and 155 deep soils in the Qianjiang District of Chongqing City, China, and 141 co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1a0533cea32a7f1743a2571c184cc2e6
https://pubmed.ncbi.nlm.nih.gov/33374074
https://pubmed.ncbi.nlm.nih.gov/33374074
Autor:
Rui, Wang, Hai, Deng, Ming-Shu, Yan, Zhong-Xiang, He, Jiao, Zhou, Shao-Biao, Liang, Qin-Qin, Zeng
Publikováno v:
Huan jing ke xue= Huanjing kexue. 41(10)
To investigate the impact of mining activities and geological background on the soil environment, 156 soil samples were collected from an agricultural land in southern Youyang County, Chongqing. The content and pH of heavy metals in the soil were ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4d8f592af4e3720ce1191b9fa306ffbd
https://pubmed.ncbi.nlm.nih.gov/33124409
https://pubmed.ncbi.nlm.nih.gov/33124409
Autor:
Ou, Peng, Yu-Ling, Liu, Bai-Qing, Tie, Zhong-Xiang, He, Rui-Jia, Yang, Dan-Yang, Li, Shou-Tao, Liu, Hai-Yan, Luo
Publikováno v:
Huan jing ke xue= Huanjing kexue. 40(9)
In order to evaluate the effects and mechanisms of flooding measures, soil conditioner, silicon mineral fertilizer and sprayed foliar fertilizer, gypsum powder, and their multiple treatments for reducing Cd accumulation in rice grown in Cd-contaminat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f2fee87555a3a637490449dcb5599aef
https://pubmed.ncbi.nlm.nih.gov/31854896
https://pubmed.ncbi.nlm.nih.gov/31854896
Autor:
John J. Ellis-Monaghan, James A. Slinkman, Michel J. Abou-Khalil, Steven M. Shank, Richard A. Phelps, Zhong-Xiang He, Jeff Gross, Jeffrey P. Gambino, Mark D. Jaffe, Randy L. Wolf, Alan B. Botula, Alvin J. Joseph
Publikováno v:
2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c17dda753c1a9ba7f5c8b7e7470b2a2
https://doi.org/10.1109/sirf.2015.7119865
https://doi.org/10.1109/sirf.2015.7119865
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Leonardo Vera, Adam W. Divergilio, David L. Harame, John J. Pekarik, Xiaowei Tian, N. Cahoon, John J. Ellis-Monaghan, Q.Z. Liu, Vibhor Jain, J. Lukaitis, Marwan H. Khater, Aaron L. Vallett, Peng Cheng, John R. Long, Peter B. Gray, Wooram Lee, Renata Camillo-Castillo, James W. Adkisson, Yi Zhao, Zhong-Xiang He, V. Kaushal, M. Kerbaugh, Bjorn Zetterlund, K. Newton, Blaine J. Gross
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d16a05829f98760d3f419a2627c3feb
https://doi.org/10.1109/bctm.2014.6981293
https://doi.org/10.1109/bctm.2014.6981293
Autor:
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f768941b9f07f9c4bc96f3507b0e97
https://doi.org/10.1109/bipol.2007.4351868
https://doi.org/10.1109/bipol.2007.4351868
Autor:
Joseph, A., Qizhi Liu, Hodge, W., Gray, P., Stein, K., Previti-Kelly, R., Lindgren, P., Gebreselasie, E., Voegeli, B., Candra, P., Hershberger, D., Malladi, R., Ping-Chuan Wang, Watson, K., Zhong-Xiang He, Dunn, J.
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2007, p198-201, 4p
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p586-587, 2p
Publikováno v:
Journal of Environmental Entomology; 2023, Vol. 45 Issue 6, p1579-1586, 8p
Autor:
Wang, Bin1, Zhong, Jun-Long1, Xu, Xiang-He1, Shang, Jie1, Lin, Nan1, Lu, Hua-Ding1 johnniehuading@163.com
Publikováno v:
Journal of Orthopaedic Surgery & Research. 5/14/2020, Vol. 15 Issue 1, p1-10. 10p. 6 Diagrams, 2 Charts, 1 Graph.