Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Zhong-Ling Dai"'
Publikováno v:
Physics of Plasmas. 29:073501
In this paper, the high-accuracy ion mobility coefficient based on the Chapman–Enskog approximation to the solution of the Boltzmann equation for low pressure radio frequency plasma discharges is presented. We employ two-dimensional fluid simulatio
Publikováno v:
Plasma Sources Science and Technology. 31:025006
Radio frequency capacitively coupled plasmas (RF CCPs) sustained in fluorocarbon gases or their mixtures with argon are widely used in plasma-enhanced etching. In this work, we conduct studies on instabilities in a capacitive CF4/Ar (1:9) plasma driv
Publikováno v:
Physics of Plasmas. 28:103503
A self-consistent method for computation and testing of transport coefficients in low pressure radio frequency plasma discharges is detailed by comparing the experimental fitting formula and previous results gained from the Langevin expression. In th
Publikováno v:
Plasma Science and Technology. 18:666-673
A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-
Effect of reactant transport on the trench profile evolution for silicon etching in chlorine plasmas
Publikováno v:
Vacuum. 99:180-188
A sheath is generated over the rf biased substrate in etching processes, its properties play an important role in determining the transport of reactant species including ions and neutrals toward the substrate, as well as the surface reactions, and as
Publikováno v:
Physics of Plasmas; Nov2017, Vol. 24 Issue 11, p1-11, 11p, 1 Diagram, 2 Charts, 9 Graphs
Publikováno v:
Vacuum. 89:197-202
Ion-enhanced plasma etching has been widely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor manufacture. Especially, the pattern transfer in the production of micro-electronic devices requires high anisotropy etch to achieve deep an
Publikováno v:
Plasma Science and Technology. 13:513-518
A hybrid model is used to simulate the characteristics of a collisional sheath in a capacitively coupled plasma (CCP) driven by a dual frequency source including a RF and a pulsed current source applied to the same electrode. The hybrid model include
Publikováno v:
Current Applied Physics. 11:S121-S125
In order to investigate the mechanism of etching in low pressure radio-frequency (rf) plasmas, we adopt a two-dimensional Monte-Carlo (MC) cellular method to simulate the profile evolution, in which the ion reflection, the ion angular distribution (I
Publikováno v:
Plasma Science and Technology. 13:50-54
Since processed substrates usually exhibit nonplanar surface structures in micro-electro-mechanical-systems (MEMS) etching, a two-dimensional (2D) fluid model is developed to simulate the characteristics of the sheath near a conductive substrate with