Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Zhong Yo Ho"'
Publikováno v:
Solar Energy Materials and Solar Cells. 94:22-28
We have fabricated organic photovoltaic devices with blends of poly[9,9′-dioctyl-fluorene- co -bithiophene] (F8T2) and fullerene as an electron donor and electron acceptor, respectively. A significant improvement of the photovoltaic efficiency was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69fbdfc3f7b78aa32da0fec0bc32182e
https://doi.org/10.1016/j.solmat.2009.02.019
https://doi.org/10.1016/j.solmat.2009.02.019
Autor:
Zhong Yo Ho, Dhananjay Kekuda, Jen Hsien Huang, Chih-Wei Chu, Peilin Chen, Chuan Yi Yang, Kuo-Chuan Ho, Meng-Chyi Wu, Fan Ching Chien
Publikováno v:
Organic Electronics. 10:27-33
Control of blend morphology at the nanoscale and high charge mobility is essential for polymer photovoltaic devices in terms of their power conversion efficiencies (PCE). In the case of bulk heterojunctions solar cells, both blend morphology and char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd62522badf28c9a23d1e7d27bc1cd4a
https://doi.org/10.1016/j.orgel.2008.09.007
https://doi.org/10.1016/j.orgel.2008.09.007
Publikováno v:
Nanotechnology. 20(2)
Controlled nanophase segregation within the blended films of a conjugated polymer and a soluble fullerene has enabled us to form a continuous transfer pathway for the carriers, thereby increasing the photocurrent generation for polymer photovoltaic d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d254241f7c3caa1604a88dc3b89a767c
https://pubmed.ncbi.nlm.nih.gov/19417264
https://pubmed.ncbi.nlm.nih.gov/19417264
Publikováno v:
Journal of Materials Chemistry. 19:4077
In this article, we demonstrate a simple and reliable stamping technique for fabricating multi-layer solar cells. A poly(di-methylsilane) (PDMS) stamp is used for transferring the active layers onto the substrate. An intermediate solvent treatment is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7490581341d62ca3c2a4c5c03262cbb
https://doi.org/10.1039/b903765a
https://doi.org/10.1039/b903765a
Publikováno v:
Applied Physics Letters. 92:232103
Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9106b937083438a736ebfb9ffee41877
https://doi.org/10.1063/1.2936275
https://doi.org/10.1063/1.2936275
Publikováno v:
Applied Physics Letters; 6/9/2008, Vol. 92 Issue 23, p232103, 3p, 5 Graphs
Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits.
Autor:
Chun-Wei Ou, Dhananjay, Zhong Yo Ho, You-Che Chuang, Shiau-Shin Cheng, Meng-Chyi Wu, Kuo-Chuan Ho, Chih-Wei Chu
Publikováno v:
Applied Physics Letters; 3/24/2008, Vol. 92 Issue 12, p122113, 3p, 4 Graphs