Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Zhiwei DANG"'
Publikováno v:
Meitan kexue jishu, Vol 52, Iss S1, Pp 211-220 (2024)
The prediction of mine water inflow is of great significance to the safe production of coal mines. The accurate selection of hydrogeological parameters and the selection of calculation methods have a great influence on the accurate prediction of mine
Externí odkaz:
https://doaj.org/article/185557fd3c974d56907577b9dc6c9220
Autor:
Yaxin Ding, Peng Yuan, Jie Yu, Yuting Chen, Pengfei Jiang, Yuan Wang, Yannan Xu, Shuxian Lv, Zhiwei Dang, Boping Wang, Xiaoxin Xu, Tiancheng Gong, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:5391-5394
Autor:
Peng Yuan, Boping Wang, Yang Yang, Shuxian Lv, Yuan Wang, Yannan Xu, Pengfei Jiang, Yuting Chen, Zhiwei Dang, Yaxin Ding, Tiancheng Gong, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 43:1045-1048
Autor:
Yuting Chen, Yang Yang, Peng Yuan, Pengfei Jiang, Yannan Xu, Shuxian Lv, Yaxin Ding, Zhiwei Dang, Tiancheng Gong, Yan Wang, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 43:930-933
Autor:
Yannan Xu, Yang Yang, Shengjie Zhao, Tiancheng Gong, Pengfei Jiang, Yuan Wang, Peng Yuan, Zhiwei Dang, Yuting Chen, Shuxian Lv, Yaxin Ding, Yan Wang, Jinshun Bi, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:2145-2150
Autor:
Zhiwei Dang, Shuxian Lv, Zhaomeng Gao, Meiwen Chen, Yannan Xu, Pengfei Jiang, Yaxin Ding, Peng Yuan, Yuan Wang, Yuting Chen, Qing Luo, Yan Wang
Publikováno v:
IEEE Electron Device Letters. 43:561-564
Autor:
Pengfei Jiang, Kunran Xu, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang, Qing Luo
Publikováno v:
Science China Information Sciences. 66
Autor:
Peng Yuan, Ge-Qi Mao, Yan Cheng, Kan-Hao Xue, Yunzhe Zheng, Yang Yang, Pengfei Jiang, Yannan Xu, Yuan Wang, Yuhao Wang, Yaxin Ding, Yuting Chen, Zhiwei Dang, Lu Tai, Tiancheng Gong, Qing Luo, Xiangshui Miao, Qi Liu
Publikováno v:
Nano Research. 15:3667-3674
Autor:
Yaxin Ding, Yan Wang, Zhiwei Dang, Tiancheng Gong, Pengfei Jiang, Jinshun Bi, Yannan Xu, Haoran Yu, Yang Yang, Yuting Chen, Peng Yuan, Shuxian Lv, Shengjie Zhao, Yuan Wang, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:430-433
In this brief, we reported the improved break-down reliability and endurance in 10-nm Hf $_{0.5}$ Zr $_{0.5}$ O₂(HZO) using grain boundary interruption. By inserting an amorphous Al₂O₃ layer in the middle of polycrystalline HZO, grain boundarie
Autor:
Yuting Chen, Zhaomeng Gao, Yuan Wang, Tiancheng Gong, Zhiwei Dang, Yan Wang, Shuxian Lv, Peng Yuan, Yang Yang, Pengfei Jiang, Yannan Xu, Yaxin Ding, Qing Luo
Publikováno v:
Nano Research. 15:2913-2918
Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitor