Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Zhitong Bai"'
Publikováno v:
Materials Research Letters, Vol 10, Iss 6, Pp 343-351 (2022)
Nonequilibrium relaxations in a multiplicity of tilted grain boundaries (GBs) subjected to ultrafast thermal driving forces are investigated by atomistic modeling. By scrutinizing the intermediate metastable microstates and their assessable activatio
Externí odkaz:
https://doaj.org/article/fc17941f690842b0ae6231dc9fb1ca99
Publikováno v:
Acta Materialia. 200:328-337
The kinetic evolution of a multiplicity of metastable grain boundaries (GBs) under fast driving conditions are studied by atomistic modeling. Assisted with an enhanced statistical analysis, the energetic evolution of GBs over a broad metastability-te
Publikováno v:
Nanoscale. 11:20754-20765
Various types of topological defects are produced during proton irradiation, which are crucial in functionalizing graphene, but the mechanisms of the defect generation process and the structure change are still elusive. Herein, we investigated the gr
Publikováno v:
Materials Science and Engineering: A. 848:143144
Publikováno v:
Physical Review Materials. 4
The interaction between a ${}^{1}/{}_{2}\left[\overline{1}10\right]\left(111\right)$ edge dislocation and a (001) Guinier-Preston (GP) zone in dilute Al-Cu alloys is studied via atomistic modeling. In stark contrast to the previously reported Orowan
Publikováno v:
Nanoscale. 8:8761-8772
Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the
Autor:
Yue Fan, Zhitong Bai
Publikováno v:
Physical Review Letters. 120
The interaction between an edge dislocation and a sessile vacancy cluster in bcc Fe is investigated over a wide range of strain rates from ${10}^{8}$ down to ${10}^{3}\text{ }\text{ }{\mathrm{s}}^{\ensuremath{-}1}$, which is enabled by employing an e
Publikováno v:
The Journal of Physical Chemistry C. 119:26793-26802
Ion bombardment is a key physical process in the ion implantation and irradiation of graphene, with important implications for tuning graphene’s electronic properties and for understanding the material’s behavior in irradiative environment. Using
Publikováno v:
RSC Advances 5(107), 87981-87986 (2015). doi:10.1039/C5RA18519J
RSC Advances 5(107), 87981-87986(2015). doi:10.1039/C5RA18519J
Published by RSC Publishing, London
Published by RSC Publishing, London
Publikováno v:
Physical Chemistry Chemical Physics. 17:29007-29013
Recent experiments have discovered very different thermal conductivities between the spider silk and the silkworm silk. Decoding the molecular mechanisms underpinning the distinct thermal properties may guide the rational design of synthetic silk mat