Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Zhiting Geng"'
Autor:
Fuxiang, Huang, Jusheng, Ma, Honglong, Ning, Zhiting, Geng, Chao, Lu, Shumei, Guo, Xuetao, Yu, Tao, Wang, Hong, Li, Huafen, Lou
Publikováno v:
In Scripta Materialia 2003 48(1):97-102
Publikováno v:
Journal of Rare Earths. 26:85-88
Employing Dy 2 O 3 , Al 2 O 3 , and SiO 2 as starting materials, several series of Dy 2 O 3 -Al 2 O 3 -SiO 2 sealing glass were prepared. The relationship between their coefficients of thermal expansion and the contents of Dy 2 O 3 , Al 2 O 3 and SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::821036dc321a3f1b8e4b5dff4ea162c3
https://doi.org/10.1016/s1002-0721(08)60043-5
https://doi.org/10.1016/s1002-0721(08)60043-5
Publikováno v:
Journal of Rare Earths. 25:249-252
With Al 2 O 3 , Dy 2 O 3 , and SiO 2 as starting materials, the basic glass of Al 2 O 3 -Dy 2 O 3 -SiO 2 system was prepared by conventional melting technology, and their thermal expansion coefficients (TECs) at different anneal time were investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582c9358a3a2784b88ed86bd6a0c607b
https://doi.org/10.1016/s1002-0721(07)60082-9
https://doi.org/10.1016/s1002-0721(07)60082-9
Publikováno v:
Materials Letters. 57:2135-2139
The aging of Cu–Ni–Si–Zn alloy for lead frame is investigated. The results showed that the peak of hardening effect occurs after aging for about 1 h and the electrical conductivity increases continuously with aging times. The hardness of the al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995378f27219319b755afccb94e8aeea
https://doi.org/10.1016/s0167-577x(02)01212-0
https://doi.org/10.1016/s0167-577x(02)01212-0
Publikováno v:
Surface Review and Letters. 10:95-99
DCB means direct copper bonding and denotes a process in which copper and a ceramic material are directly bonded. Between the temperature of the metal's melting point and the eutectic temperature of the metal-oxygen, DCB depends on the eutectic compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caeb233510958c8b905474274c60d25f
https://doi.org/10.1142/s0218625x03004640
https://doi.org/10.1142/s0218625x03004640
Publikováno v:
Ceramics International. 29:689-694
Sapphire and hot-pressed 99% Al2O3 ceramic were joined using Ag70.5Cu27.5Ti2 bracing filler metal in a vacuum electric furnace. The interface reaction between Ag70.5Cu27.5Ti2 alloy and sapphire, hot-pressed Al2O3 ceramic during brazing is reported. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1fbeb2760842e1fbeb1c01f662c6b43
https://doi.org/10.1016/s0272-8842(02)00218-3
https://doi.org/10.1016/s0272-8842(02)00218-3
Publikováno v:
2012 13th International Conference on Electronic Packaging Technology & High Density Packaging.
Combining with the analysis of solder melting point, spreading rate and tensile strength, a new Sn-Zn lead-free solder system has been developed. The solder melting point is 183 °, it is very close to Pb-Sn eutectic solder melting temperature, the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05239e3b9a1e4015b78a994966d81181
https://doi.org/10.1109/icept-hdp.2012.6474661
https://doi.org/10.1109/icept-hdp.2012.6474661
Publikováno v:
Fifth International Conference onElectronic Packaging Technology Proceedings, 2003. ICEPT2003..
The reliability of the whole electronic system is determined by the electronic devices, components and materials and especially the application properties of materials is the base of high reliability. Failure analysis of electronic packaging shows th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a329580c4d42218f341a2ba0306e3d
https://doi.org/10.1109/eptc.2003.1298750
https://doi.org/10.1109/eptc.2003.1298750
Publikováno v:
Fifth International Conference on Electronic Packaging Technology Proceedings, 2003. ICEPT2003; 2003, p321-326, 6p
Publikováno v:
Surface Review & Letters; Feb2003, Vol. 10 Issue 1, p95, 5p