Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Zhineng, Fan"'
Publikováno v:
Biochemical Genetics. 60:790-806
Thoracic aortic aneurysm (TAA) is a prevalent health problem worldwide. Long non-coding RNA H19was highly expressed in TAA patients, but the function and mechanism of H19 in TAA remain unknown. The expression levels of H19, microRNA-1-3p (miR-1-3p),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::906f6e10356c8cab8287fe6f897795bc
https://doi.org/10.1007/s10528-021-10118-y
https://doi.org/10.1007/s10528-021-10118-y
Autor:
Chris Steffen, Hongqing Zhang, Kevin M. McIlvain, Victor Mahran, Zhineng Fan, Roc Lv, Zhaoqing Chen, Biao Cai, Luis Fukazawa, Brian Samuel Beaman, Junyan Tang, Kyle Giesen
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Differential DIMM (DDIMM) is being defined in JEDEC and uses OMI as a host interface with the data transfer rate being specified at 25.6Gb/s at present and at 51.2Gb/s in the future. A prior 2019∼20 study [13] of full channel simulation and electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805e6c57449ebe1bf4bf3156d09542fa
https://doi.org/10.1109/ectc32696.2021.00207
https://doi.org/10.1109/ectc32696.2021.00207
Autor:
Megan Nguyen, Brian Samuel Beaman, Dale Becker, Kevin M. McIlvain, Zhineng Fan, Junyan Tang, Biao Car, Abhijit Wander, Glen A. Wiedemeier, Hongqing Zhang, Sungjun Chun, Daniel M. Dreps, Brian J. Connolly, Zhaoqin Chen, Yifan Huang, Jose A. Hejase, Victor Mahran, Kyle Giesen, Baughen Devon
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
DDR5 Differential DIMM (DDIMM) is being defined in JEDEC and uses OMI as a host interface with the data transfer rate per data differential pair being specified at 25.6Gb/s minimum at present and at 51.2Gb/s maximum in the future. This is a significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9136c15f300b3bc939a6c76c3ccc5b
https://doi.org/10.1109/ectc32862.2020.00158
https://doi.org/10.1109/ectc32862.2020.00158
Autor:
Daniel M. Dreps, Chen Qiaoli, Biao Cai, Jose A. Hejase, Junyan Tang, Stephen Smith, Zhineng Fan, Kyu-hyoun Kim, Rocky Huang, Brian J. Connolly, Yifan Huang, Kyle Giesen, Luyun Yi
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
DDR5 Differential DIMM (DDIMM) is being defined in JEDEC and will be introduced to the market in 2020. DDR5 DDIMM uses OMI (OpenCAPI Memory Interface) as the host interface. On the DDIMM printed circuit board (PCB), the minimum data transfer rate per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64e17093428f12f1ac91ce790568130
https://doi.org/10.1109/ectc.2019.00186
https://doi.org/10.1109/ectc.2019.00186
Publikováno v:
IEEE Transactions on Plasma Science. 28:371-375
Hydrogen plasma immersion ion implantation (PIII) in conjunction with ion-cut is an efficient and economical technique to synthesize silicon-on-insulator (SOI) substrates. Unlike beam-line ion implantation, the PIII hydrogen profile usually exhibits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d19c0591249ee9ca9b09349e9e09622
https://doi.org/10.1109/27.848095
https://doi.org/10.1109/27.848095
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 155:75-78
Hydrogen plasma immersion ion implantation (PIII) in conjunction with ion-cut has been successfully utilized to fabricate silicon-on-insulator (SOI) wafers. In order for PIII to be accepted by the semiconductor industry as a commercial process, surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f8c5b5c5514fbcdcc9124239b764ab5
https://doi.org/10.1016/s0168-583x(99)00297-9
https://doi.org/10.1016/s0168-583x(99)00297-9
Publikováno v:
Review of Scientific Instruments. 70:2818-2821
Plasma immersion ion implantation (PIII) is an excellent surface modification technique because it is not restricted by the line-of-sight limitation that plagues conventional beamline ion implantation. However, the lack of in situ monitoring has hamp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6bf7e967bd7ec9b218201f3cd9eba5
https://doi.org/10.1063/1.1149801
https://doi.org/10.1063/1.1149801
Publikováno v:
IEEE Transactions on Plasma Science. 27:633-636
Plasma immersion ion implantation (PIII) is an economical means to implant a high dose of hydrogen into silicon and when combined with ion cut, has been demonstrated to be a viable technique to fabricate silicon-on-insulator (SOI). However, its succe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5820b0b13bd3cd3f542e4b3d40fdf963
https://doi.org/10.1109/27.772296
https://doi.org/10.1109/27.772296
Autor:
Zhineng Fan, Xiang Lu, Brian S. Doyle, S. Sundar Kumar Iyer, Jin Lee, Paul K. Chu, Chenming Hu, Nathan W. Cheung
Publikováno v:
Journal of Electronic Materials. 27:1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9054a50efcb5dfea8dfc335b91d55ead
https://doi.org/10.1007/s11664-998-0164-6
https://doi.org/10.1007/s11664-998-0164-6
Publikováno v:
IEEE Transactions on Plasma Science. 26:1661-1668
Mono-energetic plasma immersion ion implantation (PIII) into silicon can be attained only under collisionless plasma conditions. In order to reduce the current load on the high voltage power supply and modulator and sample heating caused by implanted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8310ddc0e251e4d524879a2775f52b18
https://doi.org/10.1109/27.747884
https://doi.org/10.1109/27.747884