Zobrazeno 1 - 10
of 507
pro vyhledávání: '"Zhigao Huang"'
Autor:
Yue Chen, Shaohua Zhang, Jiefeng Ye, Xinyi Zheng, Jian-Min Zhang, Nagarathinam Mangayarkarasi, Yubiao Niu, Hongyi Lu, Guiying Zhao, Jianming Tao, Jiaxin Li, Yingbin Lin, Oleg V. Kolosov, Zhigao Huang
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-11 (2024)
Abstract Li4Ti5O12 (LTO) is known for its zero-strain characteristic in electrochemical applications, making it a suitable material for fast-charging applications. Here, we systematically studied the quasi-equilibrium and non-equilibrium lithium-ion
Externí odkaz:
https://doaj.org/article/503dba9754c8448e9d135e74fda34577
Autor:
Wenhao Zhong, Jianming Tao, Yue Chen, Richard G. White, Long Zhang, Jiaxin Li, Zhigao Huang, Yingbin Lin
Publikováno v:
Advanced Powder Materials, Vol 3, Iss 3, Pp 100184- (2024)
Understanding the evolution of the solid electrolyte-electrode interface is currently one of the most challenging obstacles in the development of solid-state batteries (SSBs). Here, we develop an X-ray Photoelectron Spectroscopy (XPS) that allows for
Externí odkaz:
https://doaj.org/article/fd602ada9c884764ace320fcd669ccf2
Publikováno v:
Polymer Testing, Vol 126, Iss , Pp 108159- (2023)
The weak interlaminar properties severely hinder the high-property applications of carbon fiber (CF) reinforced thermoplastic composites. Here, interlaminar properties were significantly enhanced by introducing carbon nanotube (CNT) decorated polyeth
Externí odkaz:
https://doaj.org/article/82c13f0b6a31403eae42fb6b82bd40b8
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075015-075015-8 (2023)
Spin gapless semiconductor (SGS) presents abundant electric and magnetic properties and is highly sensitive to external factors, such as current, electric field, magnetic field, and stress. This paper reports on a PbPd0.9Co0.1O2/PMNPT(001) laminate t
Externí odkaz:
https://doaj.org/article/8fb035af25c841f6b2e7f73c6f626bd8
Publikováno v:
Carbon Energy, Vol 4, Iss 2, Pp 129-141 (2022)
Abstract Relieving the stress or strain associated with volume change is highly desirable for high‐performance SiOx anodes in terms of stable solid electrolyte interphase (SEI)‐film growth. Herein, a Si‐valence gradient is optimized in SiOx com
Externí odkaz:
https://doaj.org/article/b3eea96efd024be4bda3ed1cd7c6a6c1
Autor:
Dezhong Qi, Wenguang Yang, Lu Ding, Yunzhi Wu, Chen Tian, Lifeng Yuan, Yuanfang Wang, Zhigao Huang
Publikováno v:
Applied Sciences, Vol 13, Iss 16, p 9067 (2023)
With the popularization of small batch production, the main cutting method for sheet metal parts has changed. Laser cutting has become the main production method for coil material cutting. Developing an irregular part nesting method for the continuou
Externí odkaz:
https://doaj.org/article/a51ea42ac8e24f9db61ddc6df3f2c0f8
Autor:
Guancheng Shen, Yuxiao Yang, Yuchao Wang, Rujian Wang, Longhui Li, Mengyuan Zhou, Muhan Zhang, Yunming Wang, Zhigao Huang, Maoyuan Li, Huamin Zhou, Yun Zhang
Publikováno v:
Polymer Testing, Vol 118, Iss , Pp 107884- (2023)
Stretching is the most important way of forming polymer films, and the mechanism of stretch-induced structural evolution is a long-standing fundamental issue in the stretching process of polymer films. Current methods are limited in sampling frequenc
Externí odkaz:
https://doaj.org/article/ccf662f514224f098169af090c0c21a8
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
The moiré pattern restricts the electronic states of transition metal bilayers, thus extending the concept of the magic angle found in twisted bilayer graphene to semiconductors. Here, we have studied the electronic structure of the twisted bilayer
Externí odkaz:
https://doaj.org/article/6bf74aa52e75488bb4ecf3f5dd287f14
Autor:
Wei Jiang, Cheng Chen, Tianzhengxiong Deng, Xukang Wang, Zhigao Huang, Helezi Zhou, Huamin Zhou
Publikováno v:
Polymer Testing, Vol 108, Iss , Pp 107509- (2022)
The overmolding for thermoplastic composites is an integrated process that can manufacture multilayer parts with complex structures. However, the interfacial bonding strength between layers manufactured by different processes is weak. Here we study h
Externí odkaz:
https://doaj.org/article/c38c198281a14f17a16a4e2754badf10
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045315-045315-7 (2022)
Electronic structures of non-twisted and twisted WTe2/WSe2 heterojunction bilayers were investigated using first-principles calculations. Our results show that, for the twisted WTe2/WSe2 heterojunction bilayer, the bandgaps are all direct bandgaps, a
Externí odkaz:
https://doaj.org/article/7655219a55834642b306cc77a4799548