Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Zhifeng Gan"'
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
Lithography is facing great challenges from the continuous shrinkage of critical dimension in order to satisfy the development of the technology node. To extend ArF immersion lithography to sub 20 nm technology node, it is necessary to print smaller
Publikováno v:
2015 China Semiconductor Technology International Conference.
The semiconductor industry is being driven by “Moore's law” towards smaller and smaller feature sizes and pitches. The 28nm technology node is facing many challenges especially at the POLY layer lithography process, which is the most critical and
Publikováno v:
2015 China Semiconductor Technology International Conference.
The overlay performance in lithography process depends on both the machine control abilities and overlay residue control in processes. One of important optimization directions of lithography processes in advanced node is to decrease overlay residue i
Autor:
Wuping Wang, Liang Zhang, Xianguo Dong, Yu Zhang, Albert Pang, Zhifeng Gan, Zhengkai Yang, Yang Wang, Zhibiao Mao, Xiaobo Guo, Runling Li, Chong Ermin
Publikováno v:
2015 China Semiconductor Technology International Conference.
It is well known that different alignment mark designs will have different responses to process conditions. An Alignment mark optimized for traditional process might not be suitable for DPS (Double Patterning with Spacer ) technology due to changes i
Publikováno v:
2015 China Semiconductor Technology International Conference.
The paper presents the results of poly-cut layer lithography process development for 28 nm technology nodes and beyond, which include the simulation of illumination modes, the assessment of tri-layer chemical materials and verification on the silicon
Autor:
Yu Zhang, Liang Zhang, Xiaobo Guo, Zhifeng Gan, Shuxin Yao, Zhengkai Yang, Wuping Wang, Zhibiao Mao, Runling Li, Chong Ermin, Xianguo Dong, Quanbo Li
Publikováno v:
2015 China Semiconductor Technology International Conference.
Due to good electrical characteristics and controllability, 3D-FinFET is proved to be a promising substitution of planar poly-gate devices for 20nm technology node and beyond. One of the greatest challenges is to fabricate the Fin and Poly-gate to me
Autor:
Hongyu Yang, Zhifeng Gan
Publikováno v:
2010 International Conference on Information, Networking and Automation (ICINA).
Texture enhancement is one of the most important techniques in digital image processing. In order to enhance the image texture, extract more subtle texture information, and overcome the lack of classical gradient operator, a fractional differential t
Autor:
Zhifeng Gan, Hongyu Yang
Publikováno v:
2010 International Conference on Information Networking & Automation (ICINA); 2010, pV1-V337, 670p
Autor:
Xiaobo Guo, Xianguo Dong, Shuxin Yao, Zhifeng Gan, Wuping Wang, Zhengkai Yang, Ermin Chong, Quanbo Li, Zhibiao Mao, Liang Zhang, Runling Li, Yu Zhang
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-3, 3p