Zobrazeno 1 - 10
of 382
pro vyhledávání: '"Zhichuan Niu"'
Autor:
Hongguang Yu, Chengao Yang, Yihang Chen, Tianfang Wang, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract Thanks to high performance above room temperature, antimonide laser diodes have shown great potential for broad application in the mid-infrared spectral region. However, the laser`s performance noticeably deteriorates due to the reduction of
Externí odkaz:
https://doaj.org/article/c086a44a2ca64908931d5ce5a8cadd0b
Autor:
Jianmei Shi, Chengao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Hao Tan, Yu Zhang, Dongwei Jiang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Publikováno v:
High Power Laser Science and Engineering, Vol 12 (2024)
Power scaling in conventional broad-area (BA) lasers often leads to the operation of higher-order lateral modes, resulting in a multiple-lobe far-field profile with large divergence. Here, we report an advanced sawtooth waveguide (ASW) structure inte
Externí odkaz:
https://doaj.org/article/e28296353bbc4b9ea0e287e015bd40b6
Autor:
Xueshi Li, Shunfa Liu, Yuming Wei, Jiantao Ma, Changkun Song, Ying Yu, Rongbin Su, Wei Geng, Haiqiao Ni, Hanqing Liu, Xiangbin Su, Zhichuan Niu, You-ling Chen, Jin Liu
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-8 (2023)
Abstract The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid i
Externí odkaz:
https://doaj.org/article/7520929fcda541d5815ced595c4f93a3
Autor:
Tianfang Wang, Chengao Yang, Yihang Chen, Jianmei Shi, Hongguang Yu, Xiangbin Su, Yu Zhang, Yingqiang Xu, Zhichuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-10 (2022)
Abstract GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design and formation have not been invest
Externí odkaz:
https://doaj.org/article/3b507e4df7534813a657e17391354d5d
Autor:
Yueguang Zhou, Yuhui Yang, Yujing Wang, Aris Koulas-Simos, Chirag C Palekar, Imad Limame, Shulun Li, Hanqing Liu, Haiqiao Ni, Zhichuan Niu, Kresten Yvind, Niels Gregersen, Minhao Pu, Stephan Reitzenstein
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 2, p 025403 (2024)
This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and
Externí odkaz:
https://doaj.org/article/6c9254f23ef04082b946e751875d1ddb
Publikováno v:
Crystals, Vol 13, Iss 10, p 1417 (2023)
InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall
Externí odkaz:
https://doaj.org/article/e20f9b0281a14ea0acbcd2923d9553fc
Autor:
Xiangjun Shang, Xiangbin Su, Hanqing Liu, Huiming Hao, Shulun Li, Deyan Dai, Mifeng Li, Ying Yu, Yu Zhang, Guowei Wang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 1959 (2023)
In this work, we developed pre-grown annealing to form β2 reconstruction sites among β or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a
Externí odkaz:
https://doaj.org/article/31890a676dfe4906aab21730ca659994
Autor:
Jian Feng, Bo Meng, Jinming Shang, Xin Zhang, Cunzhu Tong, Yu Zhang, Zhichuan Niu, Lijun Wang
Publikováno v:
Applied Sciences, Vol 13, Iss 12, p 6873 (2023)
We present a mode−locked GaSb−based optically pumped semiconductor disk laser operating at 2 µm based on the self−mode−locked mechanism. Using the delay differential equation model, we discuss the influence of cavity length on the stability
Externí odkaz:
https://doaj.org/article/8e1269dfdea842d4a81c25447dc4836d
Autor:
Yihang Chen, Chengao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Xiangbin Su, Yu Zhang, Youwen Zhao, Cunzhu Tong, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Applied Sciences, Vol 13, Iss 9, p 5506 (2023)
We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD char
Externí odkaz:
https://doaj.org/article/ab0bca53658a42849b6d8352bc307a68
Autor:
Shulun Li, Yao Chen, Xiangjun Shang, Ying Yu, Jiawei Yang, Junhui Huang, Xiangbin Su, Jiaxin Shen, Baoquan Sun, Haiqiao Ni, Xingliang Su, Kaiyou Wang, Zhichuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020)
Abstract We proposed a precise calibration process of Al 0.9 Ga 0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) i
Externí odkaz:
https://doaj.org/article/95adb39333894069bf9271693fc2e0b8