Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Zhibiao, Shao"'
Publikováno v:
Microsystem Technologies. 27:1031-1038
In this paper, we present two silicon-on-insulator tunnel field-effect transistors (SOI-TFETs), referred as a lateral dual-gate TFET and a lateral triple-gate TFET, which consist of one or two vertical thin vertical dielectric layers within the origi
Publikováno v:
Microsystem Technologies. 24:3949-3956
An inspiring UTBB SOI MOSFET structure with enhanced immunity to the drain-induced barrier lowering (DIBL) is analyzed. The structure includes the dual-gates in the lateral direction. The voltage difference is applied between the dual-gates, through
Publikováno v:
Sensors, Vol 19, Iss 9, p 2210 (2019)
Sensors
Volume 19
Issue 9
Sensors (Basel, Switzerland)
Sensors
Volume 19
Issue 9
Sensors (Basel, Switzerland)
The inductive proximity sensor (IPS) is applicable to displacement measurements in the aviation field due to its non-mechanical contact, safety, and durability. IPS can increase reliability of position detection and decrease maintenance cost of the s
Publikováno v:
Microsystem Technologies. 24:179-192
Based on the evanescent-mode analysis, an insightful study of the channel potential is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And a two-dimensional (2D) analytical subthreshold current
A 64-bits RISC Dual-Core microprocessor with high performance and low power consumption is presented in this paper. The processor has a symmetric architecture with two cores. Each of them has three stage pipeline, 64-bit data-path and 64-bit address
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::6cd27b3190bc12e6e20d6091aed4aa09
https://zenodo.org/record/3991121
https://zenodo.org/record/3991121
Publikováno v:
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 7; Pages: 1533
Sensors; Volume 17; Issue 7; Pages: 1533
Inductive proximity sensors (IPSs) present a unique no-contact advantage. They are widely preferred for displacement measurement in various industrial fields (e.g., aviation and aerospace), and they are improved continuously. When the inductance and
Publikováno v:
2017 International Conference on Applied System Innovation (ICASI).
The impact of gate voltage differences on the performance of the novel n-type silicon homojunction SOI-Tunnel FET is studied. Based on numerical simulation results using Synopsys Technology Computer-Aided Design (TCAD), the higher on-current and the
Publikováno v:
2017 International Conference on Applied System Innovation (ICASI).
A two-dimensional (2D) physics-based compact subthreshold swing model is proposed for the ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping profile. Based on the channel potential which is influenced by the non-uniform doping
Autor:
Zhibiao Shao, Chunming Zhang
Publikováno v:
Analog Integrated Circuits and Signal Processing. 70:391-404
Today and in the future, high frequency low voltage DC---DC converters are an effective power-management solution for fast transient response and small profile in portable electronic systems. This paper presents a robust feedforward compensation sche
Publikováno v:
Journal of Electronic Testing. 27:477-484
This paper presents a novel seed-based test pattern generator (SB-TPG). The core of SB-TPG is a seed sequence generator. A coverage-driven seed generation algorithm has been proposed to generate the optimized seeds. The test sequence generated by SB-