Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Zhian Ning"'
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075109-075109-7 (2023)
A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier lea
Externí odkaz:
https://doaj.org/article/1c9633376e844421bed548a4c2132045
