Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Zhi-Zhan Chen"'
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065219-065219-9 (2016)
The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The resi
Externí odkaz:
https://doaj.org/article/f8978c5485db4a809532c566b40239f1
Autor:
Zhi-Zhan Chen, 陳志展
97
Scalable video coding (SVC) is a video compression technique which provides flexible bitstream extraction according to device types and network bandwidth, and WIMAX is a new wireless communication technique. Combining the two techniques to tr
Scalable video coding (SVC) is a video compression technique which provides flexible bitstream extraction according to device types and network bandwidth, and WIMAX is a new wireless communication technique. Combining the two techniques to tr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48363563832984271771
Publikováno v:
Journal of Applied Physics. 132:135702
The photoexcited carrier dynamics of high-purity (HPSI) and vanadium-doped semi-insulating (VDSI) 4H-SiC irradiated by lasers with different wavelengths and powers were investigated. Raman spectra were measured at room temperature and the photoexcite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd292304c63fc7b12cfaf17659907ec
https://doi.org/10.1063/5.0108903
https://doi.org/10.1063/5.0108903
Publikováno v:
IEEE Transactions on Electron Devices. 66:3929-3934
Ni/4H-SiC Schottky barrier diodes (SBDs) are fabricated and then annealed at different annealing temperatures to explore the Schottky barrier inhomogeneity (SBI). The macro- and microelectrical properties of SBDs are characterized by current–voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0099615a70d96f9ee31507d294051d56
https://doi.org/10.1109/ted.2019.2929827
https://doi.org/10.1109/ted.2019.2929827
Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications
Publikováno v:
IEEE Transactions on Electron Devices. 65:641-647
Ohmic contacts to n-type 4H-SiC using Ni layer and W/Ni bilayer were investigated and compared. The phase composition, electronic states, and carbon structural evolution of the contact layer were analyzed by X-ray diffraction, X-ray photoelectron spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555e7243ae6f159703ae27b3f6d3be5e
https://doi.org/10.1109/ted.2017.2784098
https://doi.org/10.1109/ted.2017.2784098
Publikováno v:
Materials Science in Semiconductor Processing. 71:116-120
The high temperature performance plays a crucial role in the high-temperature harsh environment detection. In this paper, the electrical and optical characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodiodes (PDs) were investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2306e77819c8804078db2bed0ae54df
https://doi.org/10.1016/j.mssp.2017.07.018
https://doi.org/10.1016/j.mssp.2017.07.018
Publikováno v:
IEEE Electron Device Letters. 38:1405-1408
The size controlled Al nanoparticles (NPs) were prepared by magnetron sputtering and subsequent rapid thermal annealing. Significant deep ultraviolet (DUV) detection enhancement is demonstrated on 4H-SiC metal–semiconductor–metal (MSM) ultraviole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb211b81b89de33ed312ee6c2b648bcd
https://doi.org/10.1109/led.2017.2739189
https://doi.org/10.1109/led.2017.2739189
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 22, p225705-1-225705-6, 6p, 1 Diagram, 2 Graphs
Publikováno v:
Journal of Applied Physics. 127:174501
The thermal stability of Ohmic contacts to n-type 4H-SiC using Au/Pt/Ni and Au/Pt/W/Ni layers has been systematically investigated after long-time aging in air at 300 °C and 400 °C. The specific contact resistance (ρc) is calculated from current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fde4fb6f179a374f3f188e5733eebd76
https://doi.org/10.1063/5.0002560
https://doi.org/10.1063/5.0002560
Publikováno v:
Materials Science in Semiconductor Processing. 107:104866
The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have been investigated. The electrical properties of SBDs are characterized by temperature-dependent current-voltage (I–V) and capacitance-voltage (C–V) measurement. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::724e3ed1ecbc70c36508c9a45acffe3f
https://doi.org/10.1016/j.mssp.2019.104866
https://doi.org/10.1016/j.mssp.2019.104866