Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Zhi-Yuan Ye"'
Autor:
Zhi-Yuan Ye, Jin-Yu Bai, Zhi-Min Ye, Xu-Shen Zhao, Fang-Long Song, Zhen-Tao Zhou, Bing-Chen Shan, Xiao-Zhong Zhou
Publikováno v:
BMC Musculoskeletal Disorders, Vol 25, Iss 1, Pp 1-10 (2024)
Abstract Background Spinal fractures in patients with ankylosing spondylitis (AS) mainly present as instability, involving all three columns of the spine, and surgical intervention is often considered necessary. However, in AS patients, the significa
Externí odkaz:
https://doaj.org/article/30ea6de604a84a7f8d883820d80db663
Autor:
Jie Wang, Sheng‑Ye Xu, Zhi‑Yuan Ye, Zhou‑Na Sun, Jia‑Qi Zhang, Cui Qi, Rui Liu, Xiang Gao, Chuan He, Wei‑Yan You, Jun Gao
Publikováno v:
Molecular Brain, Vol 17, Iss 1, Pp 1-5 (2024)
Externí odkaz:
https://doaj.org/article/5e2b3b1a15114f2ead2f3d0c5d643f32
Autor:
Jie Wang, Sheng-Ye Xu, Zhi-Yuan Ye, Zhou-Na Sun, Jia-Qi Zhang, Cui Qi, Rui Liu, Xiang Gao, Chuan He, Wei-Yan You, Jun Gao
Publikováno v:
Molecular Brain, Vol 16, Iss 1, Pp 1-16 (2023)
Abstract Melanoma-associated antigen D1 (Maged1) has critical functions in the central nervous system in both developmental and adult stages. Loss of Maged1 in mice has been linked to depression, cognitive disorder, and drug addiction. However, the r
Externí odkaz:
https://doaj.org/article/205baf85e9ec4ffe9ef9ee99115adfdb
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 2, Pp 117-121 (2017)
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device struc
Externí odkaz:
https://doaj.org/article/a831ecc1659446f79d2fb4c50609e07e
Autor:
Zhan-Dong Liu, Zong-Guo Li, Ya-Nan Zhao, Su-Heng Zhang, Zhi-Yuan Ye, De-Jian Zhang, Hong-Chao Liu, Jun Xiong, Hong-Guo Li
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2332c88823a79ab07e231bee18a6dc47
https://doi.org/10.1103/physrevapplied.19.044025
https://doi.org/10.1103/physrevapplied.19.044025
Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery
Publikováno v:
IEEE Electron Device Letters. 40:1159-1162
In this letter, a 650V superjunction (SJ) MOSFET with a built-in MOS-channel diode for fast reverse recovery is proposed and fabricated. Simulations on the new device via Sentaurus TCAD are first made. For the proposed device, a body contact is emplo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff04c86b24887c1889c2a01184265ec
https://doi.org/10.1109/led.2019.2915008
https://doi.org/10.1109/led.2019.2915008
Publikováno v:
IEEE Electron Device Letters. 40:589-592
This letter presents a novel super junction (SJ) device integrated with an on-chip bipolar junction transistor (BJT) connected between the gate and the source. This parallel path through the BJT to discharge the gate of the SJ device reduces its swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e599a77cfcd20eb5fdfa9b46cf7f6a22
https://doi.org/10.1109/led.2019.2899071
https://doi.org/10.1109/led.2019.2899071
Autor:
Qiang Fu, Zhi-Jun Xin, Zhi-Yuan Ye, Guangru Cao, Yuqiang Cai, Weijun Kong, Wenbo Liao, Jun Ao
Publikováno v:
World Neurosurgery. 106:945-952
Objective To observe the clinical effects of posterior percutaneous full-endoscopic cervical foraminotomy in patients with osseous foraminal stenosis. Methods Nine patients with osseous foraminal stenosis underwent surgery using the posterior percuta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfe6ddc82c7c8fe78b8a8dffe77a5472
https://doi.org/10.1016/j.wneu.2017.07.085
https://doi.org/10.1016/j.wneu.2017.07.085
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
A DRAM based on U-shape Fin Field-Effect Transistor (U-FinFET) is investigated in this paper. Compared with the Recess-Channel-Array-Transistor (RCAT), this structure shows relatively high I on /I off ratio and excellent short channel behavior, such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9000df4044d36a5e837de7a3c47e57
https://doi.org/10.1109/icsict.2018.8564889
https://doi.org/10.1109/icsict.2018.8564889
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, a novel device structure of Flash memory cells with vertical channel is proposed and simulated by Silvaco technology computer aided design (TCAD). It is shown that the proposed device structure has the advantages of both extremely tiny
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f624d81119a04ceda46988cbdf4f87
https://doi.org/10.1109/icsict.2018.8565763
https://doi.org/10.1109/icsict.2018.8565763