Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Zhi-Ren Qiu"'
Autor:
Zhe Chuan Feng, Jiamin Liu, Deng Xie, Manika Tun Nafisa, Chuanwei Zhang, Lingyu Wan, Beibei Jiang, Hao-Hsiung Lin, Zhi-Ren Qiu, Weijie Lu, Benjamin Klein, Ian T. Ferguson, Shiyuan Liu
Publikováno v:
Materials, Vol 17, Iss 12, p 2921 (2024)
GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant mole
Externí odkaz:
https://doaj.org/article/ba9752e518824bcc952da569dc862ff4
Autor:
Haiyuan Wei, Ziying Tang, Yan Shen, Huying Zheng, Yaqi Wang, Runchen Wang, Hai Zhu, Shichen Su, Yunliang Zhu, Jie Zhou, Zhi Ren Qiu
Publikováno v:
Journal of Physics D: Applied Physics. 55:305103
In the progress of nanoengineering of noble metals, the extreme nonlinear optics within nanometric volumes is of great research interest in recent years. In particular, plasmonic nanostructures offer unique route for enhancing high-order harmonic gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e4d211bc6805683d7a7546422bfc5d0
https://doi.org/10.1088/1361-6463/ac654a
https://doi.org/10.1088/1361-6463/ac654a
Autor:
Zhe Chuan Feng, Ting Mei, Deng Xie, Hung-Hsiang Cheng, Shiyuan Liu, Lingyu Wan, Zhi Ren Qiu, Devki N. Talwar
Publikováno v:
Applied Surface Science. 421:748-754
Comprehensive optical and structural properties are reported on several MBE grown thin Si 1-x Ge x epifilms and Si 1-x Ge x /Si superlattices with low Ge contents by using spectroscopic ellipsometry (SE), high resolution x-ray diffraction (HR-XRD) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fb6d361562dd80ffa834f99fa506b6
https://doi.org/10.1016/j.apsusc.2017.03.066
https://doi.org/10.1016/j.apsusc.2017.03.066
Autor:
Zhi-Ren Qiu, Zhi-Wei Zheng, Jin-Zhao Wu, Qing-Xuan Li, Hao Long, Lei-Ying Ying, Shou-Qiang Lai, Baoping Zhang
Publikováno v:
Chinese Physics B. 29:127802
Photoluminescence (PL) characteristics of the structure consisting of green InGaN/GaN multiple quantum wells (MQWs) and low indium content InGaN/GaN pre-wells are investigated. Several PL peaks from pre-wells and green InGaN/GaN MQWs are observed. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64ab1ff5ef8d1eea8a38482d77be6b6
https://doi.org/10.1088/1674-1056/abb65b
https://doi.org/10.1088/1674-1056/abb65b
Publikováno v:
Materials Letters. 173:170-173
This paper reports the transient photoluminescence properties of a typical InGaN/GaN multiple quantum well light emitting diode structure. Two decay processes were found to contribute to the photoluminescence dynamics. Based on the exciton localizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51bdabde737ba16a53065ad06e7834c5
https://doi.org/10.1016/j.matlet.2016.03.010
https://doi.org/10.1016/j.matlet.2016.03.010
Autor:
Lei-Ying Ying, Huan Xu, Xiao Ling Shi, Hao Long, Rong bin Xu, Zhi wei Zheng, Yang Mei, Hao Chung Kuo, Zhi Ren Qiu, Baoping Zhang, Jianping Liu
Publikováno v:
Journal of Luminescence. 216:116717
We fabricated GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) by inserting InGaN quantum well (QW) active region between two dielectric distributed Bragg reflectors (DBRs). Due to the different gain enhancement factors in a single devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e378f8b29c5f08e5568c579bb247cb4
https://doi.org/10.1016/j.jlumin.2019.116717
https://doi.org/10.1016/j.jlumin.2019.116717
Publikováno v:
Asia Communications and Photonics Conference.
Mg 0.06 Zn 0.94 O films are epitaxially grown at 350 to 650 oC. Depolarization effect was found occurs at ∼390 nm, while the thickness non-uniformity increases with growth temperature, ascribed to increased Mg incorporation into hexagonal ZnO phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5375a2949fdbd465ce2c0352cd10911a
https://doi.org/10.1364/acpc.2017.su2a.117
https://doi.org/10.1364/acpc.2017.su2a.117
Publikováno v:
Asia Communications and Photonics Conference.
Indium cluster in InGaN epilayers prepared with different H 2 -treating times was investigated. In cluster with the form of lower atom bonds was evidenced by Raman spectra. Carrier lifetime was found to increase with the H 2 -treating time.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9510b6ee5c08e21b34eeeace636bb40
https://doi.org/10.1364/acpc.2017.su2a.116
https://doi.org/10.1364/acpc.2017.su2a.116
Autor:
Na Lu, Ian T. Ferguson, Bao Ping Zhang, Zhi Ren Qiu, Yi Ting He, Zhe Chuan Feng, Xiao Yan Lei
Publikováno v:
Applied Mechanics and Materials. 692:187-190
Time-resolved photoluminescence spectra of vertical cavity surface emitting laser (VCSEL) structures under different excitation intensity are investigated. The effect of the distributed Bragg reflectors (DBR) on the laser emission and the mechanism o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::669b609522858ce3bd129c61c4ca671f
https://doi.org/10.4028/www.scientific.net/amm.692.187
https://doi.org/10.4028/www.scientific.net/amm.692.187
Publikováno v:
Advanced Materials Research. 746:406-410
We present a study on five MgxZn1-xO samples with varied x (x = 0, 0.01, 0.06, 0.10 and 0.14), grown on sapphire substrate by Metalorganic Chemical Vapor Deposition (MOCVD). Combined photoluminescence (PL) and Raman scattering studies were carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381eab74f0b4c4c309f9181a14907353
https://doi.org/10.4028/www.scientific.net/amr.746.406
https://doi.org/10.4028/www.scientific.net/amr.746.406