Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Zhi-Qiang Mo"'
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0b099df9aba40686c0d24d1fffeb5a
https://doi.org/10.1109/eptc56328.2022.10013296
https://doi.org/10.1109/eptc56328.2022.10013296
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fb6f5f532c8508f56997cb48b3236e2
https://doi.org/10.1109/ipfa55383.2022.9915745
https://doi.org/10.1109/ipfa55383.2022.9915745
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e036e7d954f933b6e2e0bc960de47f
https://doi.org/10.1109/eptc53413.2021.9663879
https://doi.org/10.1109/eptc53413.2021.9663879
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd0acff9ac0f130f52c67e64cebf6fa
https://doi.org/10.1109/ipfa53173.2021.9617412
https://doi.org/10.1109/ipfa53173.2021.9617412
Autor:
Ming Wu, Rong De Xu, Qing Gou, Xiao Ming Chen, Shan Shan Lian, Zhi Qiang Mo, Zhi Mei Huang, Pei Hong Wu, Feng Shi, Hui Lan Li
Publikováno v:
Radiology. 293:707-715
Background Transarterial chemoembolization (TACE) is an effective downstaging procedure for hepatocellular carcinoma (HCC). However, knowledge of the effectiveness of radiofrequency ablation (RFA) after downstaging of HCC is currently lacking. Purpos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac11efb548aa259a6018ecaa1726d2df
https://doi.org/10.1148/radiol.2019181991
https://doi.org/10.1148/radiol.2019181991
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
A previous study [1] on arsenic depth profiling in the silicon germanium alloys based structures using numerical approach was able to resolve mass interference between 28Si75 As-and (74Ge29Si−, 73Ge30Si−, 74Ge28Si1H−, 73Ge29Si1H−, 72Ge30Si1H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e4d3650add054579786ef7bdb6c577
https://doi.org/10.1109/ipfa49335.2020.9260926
https://doi.org/10.1109/ipfa49335.2020.9260926
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
X-ray reflectivity (XRR) study is performed on single and multi-stacked TaN/Ta thin films. A model using single or multiple layers for TaN and Ta gives a good fit between the experimental and simulation results. The effect of PVD etch-back process on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c66f886a7ee2f41a2e6a13b4cb23352
https://doi.org/10.1109/ipfa49335.2020.9260634
https://doi.org/10.1109/ipfa49335.2020.9260634
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4afb0d507df6a228cf3a81ea9cd8dda
https://doi.org/10.1109/ipfa47161.2019.8984809
https://doi.org/10.1109/ipfa47161.2019.8984809
Autor:
Xintong Zhu, Xiaodong Li, Yi Liu, Zhi Qiang Mo, Ramesh Rao Nistala, Xiaoxuan Li, Ramasamy Chockalingam
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Thick polyimide layer has been used as buffer layer to absorb stress imposed by molding compounds for many years. This paper studied the adhesion strength of the thick polyimide layer under different process conditions. The stress was induced by inde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c2807885d1a0ede6ad6d31f87044de
https://doi.org/10.1109/ipfa47161.2019.8984895
https://doi.org/10.1109/ipfa47161.2019.8984895
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
Material characterization tool, Secondary Ion Mass Spectrometry (SIMS) with its high precision and reproducibility is widely used to capture any abnormality in the dopant profile of the implanted species caused by drift in implant processes or equipm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99f9734e26e1c8c55c4092c8faa9312
https://doi.org/10.1109/ipfa47161.2019.8984874
https://doi.org/10.1109/ipfa47161.2019.8984874