Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Zhi-Jun Qiu"'
Autor:
Yichen Cai, Yizhou Jiang, Xiaofei Yue, Chenxu Sheng, Yajie Qin, Shisheng Xiong, Yiqiang Zhan, Zhi-Jun Qiu, Ran Liu, Wei Chen, Zheng Liu, Laigui Hu, Chunxiao Cong
Publikováno v:
Next Nanotechnology, Vol 5, Iss , Pp 100052- (2024)
With the rapid progress of intelligent vision of the Internet of Things, the gap between the resultant high-level demands and conventional silicon-based hardware architectures is continuously widening. Biomimetic artificial neural networks (ANNs) hav
Externí odkaz:
https://doaj.org/article/7e6e938790924c7bb5dced9be78a7edb
Autor:
Yichen Cai, Yizhou Jiang, Chenxu Sheng, Zhiyong Wu, Luqiu Chen, Bobo Tian, Chungang Duan, Shisheng Xiong, Yiqiang Zhan, Chunxiao Cong, Zhi-Jun Qiu, Yajie Qin, Ran Liu, Laigui Hu
Publikováno v:
npj Flexible Electronics, Vol 7, Iss 1, Pp 1-9 (2023)
Abstract Despite that in-sensor processing has been proposed to remove the latency and energy consumption during the inevitable data transfer between spatial-separated sensors, memories and processors in traditional computer vision, its hardware impl
Externí odkaz:
https://doaj.org/article/9fbf312d38404c73a35fd75eb5619403
Autor:
Yichen Cai, Jialong Zhang, Mengge Yan, Yizhou Jiang, Husnain Jawad, Bobo Tian, Wenchong Wang, Yiqiang Zhan, Yajie Qin, Shisheng Xiong, Chunxiao Cong, Zhi-Jun Qiu, Chungang Duan, Ran Liu, Laigui Hu
Publikováno v:
npj Flexible Electronics, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage threshold
Externí odkaz:
https://doaj.org/article/77557a16ca834cf8bbda766e972bcda2
Gbps Long-Distance Real-Time Visible Light Communications Using a High-Bandwidth GaN-Based Micro-LED
Autor:
Xiaoyan Liu, Pengfei Tian, Zixian Wei, Suyu Yi, Yuxin Huang, Xiaolin Zhou, Zhi-Jun Qiu, Laigui Hu, Zhilai Fang, Chunxiao Cong, Lirong Zheng, Ran Liu
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 6, Pp 1-9 (2017)
In this investigation, we experimentally demonstrated a high-speed Gbps long distance real-time visible light communication system based on non-return-to-zero on-off keying modulation by using a high-bandwidth Gallium nitride-based micro-LED with a m
Externí odkaz:
https://doaj.org/article/e145e75a391d4e8ca51044317017cefc
Autor:
Enyao Gu, Qiyuan Wang, Youwei Zhang, Chunxiao Cong, Laigui Hu, Pengfei Tian, Ran Liu, Shi-Li Zhang, Zhi-Jun Qiu
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125329-125329-9 (2017)
Transition metal dichalcogenides (TMDCs) in monolayer form have attracted a great deal of attention for electronic and optical applications. Compared to mechanical exfoliation and chemical synthesis, laser thinning is a novel and unique “on-demand
Externí odkaz:
https://doaj.org/article/cf20cd8d85b74e38a709205d53bc85fb
Publikováno v:
Nanomaterials, Vol 9, Iss 5, p 756 (2019)
Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limitin
Externí odkaz:
https://doaj.org/article/d6fe88d9d57a40d5bfca5a523e4a3d33
Autor:
Laigui Hu, Wei Jin, Rui Feng, Muhammad Zaheer, Qingmiao Nie, Guoping Chen, Zhi-Jun Qiu, Chunxiao Cong, Ran Liu
Publikováno v:
Materials, Vol 11, Iss 9, p 1530 (2018)
Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at org
Externí odkaz:
https://doaj.org/article/cac98ad09f5c48efa925497eec5dea84
Publikováno v:
Materials, Vol 11, Iss 4, p 471 (2018)
Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiven
Externí odkaz:
https://doaj.org/article/4b60100b51124bba87e9e74455cdc031
Publikováno v:
Materials, Vol 10, Iss 12, p 1432 (2017)
The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al2O3 as the sensing film have been investigated. The Al2O3 sensing films are UVO-treated with various duration times and th
Externí odkaz:
https://doaj.org/article/0aec998a9716465dbad3cb9a73e1a19f
Autor:
Hui Yang, Qiangqiang Ye, Ruixue Zeng, Junkai Zhang, Lei Yue, Ming Xu, Zhi-Jun Qiu, Dongping Wu
Publikováno v:
Sensors, Vol 17, Iss 10, p 2415 (2017)
In this paper, capacitive-type humidity sensors were prepared by sequentially drop-coating the aqueous suspensions of zinc oxide (ZnO) nanopowders and polyvinyl pyrrolidone–reduced graphene oxide (PVP-RGO) nanocomposites onto interdigitated electro
Externí odkaz:
https://doaj.org/article/8256517acb704255a221eed52a73415b