Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Zhi-Guang, Gu"'
Publikováno v:
Frontiers in Microbiology, Vol 12 (2021)
The egg-pathogenic fungus Purpureocillium lilacinum parasitizes on nematode eggs, and thus, it is used as a good biocontrol agent against plant root-knot nematodes. However, little is known about the transcriptional response of P. lilacinum while inf
Externí odkaz:
https://doaj.org/article/ecfa2c10b41e4da69cb5667fd18be8eb
Publikováno v:
Frontiers in Microbiology
The egg-pathogenic fungus Purpureocillium lilacinum parasitizes on nematode eggs, and thus, it is used as a good biocontrol agent against plant root-knot nematodes. However, little is known about the transcriptional response of P. lilacinum while inf
Autor:
David C. Miller, Ming Zhang, Hong-qiang Lu, Bing-Zong Li, Zhi-Guang Gu, Xiang‐Jiu Zhang, Robert G. Aitken, Wen-Jie Qi, G. S. Dong, Wei-Ning Huang
Publikováno v:
Journal of Applied Physics. 77:1086-1092
The solid state reaction of Co,Ti with an epitaxially grown Si1−xGex strained layer is investigated in this article. The reaction was performed in a rapid thermal annealing system. The resulting films were characterized by Rutherford backscattering
Autor:
George A. Rozgonyi, Shichang Zou, Zuyao Zhou, Zhi-Guang Gu, Feng Hong, Zhen Sun, Rushan Ni, Chenglu Lin, Bing-Zong Li, Ping Liu, Wei-Ning Huang
Publikováno v:
Journal of Applied Physics. 74:1700-1706
Formation of CoSi2 films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single‐crystalline CoSi2 films o
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffra
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Co/Ti/Si ternary solid phase interaction is a new method of CoSi/sub 2//Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi/sub 2/ on Si substrate, self-aligned silicidation of source/dra
Autor:
Wei-Jun Wu, Wei-Feng Yu, Zhi-Guang Gu, Hua Fang, Kai Shao, Bing-Zong Li, Guo-Bao Jiang, Wei-Ning Huang
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi/sub 2/ with good thermal stability and smooth surface can be obtained after thermal annealing.
Publikováno v:
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with dif
Publikováno v:
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.
The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge r
Publikováno v:
MRS Proceedings. 441
The ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid t