Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Zhi Xun Lin"'
Effects of morphology and pore size of mesoporous silicas on the efficiency of an immobilized enzyme
Publikováno v:
RSC Advances. 11:10010-10017
An investigation is performed into the efficiency of the Streptomyces griseus HUT 6037 enzyme immobilized in three different mesoporous silicas, namely mesoporous silica film, mesocellular foam, and rod-like SBA-15. It is shown that for all three sup
Publikováno v:
Surface and Coatings Technology. 308:101-107
We report deposition of pure AlN and Sc x Al 1-x N thin films with different Sc concentration on DLC/Si substrate by RF and DC reactive magnetron co-sputtering method by using Al and Sc as targets. The X-ray diffraction (XRD) results showed that the
Publikováno v:
Surface and Coatings Technology. 284:129-132
Highly c-axis preferred orientation ScAlN films were deposited on Y-128° lithium niobate using the co-sputtering technique. The substitution of Sc atoms at Al positions causes a lattice distortion and induces a large piezoelectric response. X-ray di
Publikováno v:
Applied Mechanics and Materials. 481:264-267
In this study, we propose an approach to compute the parasitic parameters of an surface acoustic wave (SAW) resonator, which is fabricated on 36o YX lithium tantalate substrate using standard semiconductor processes. The measured admittances of the S
Autor:
Chia-Hsuan Hu, Ikai Lo, Gary Z. L. Hsu, Sean Wu, Yu-Chiao Lin, Cheng-Hung Shih, Wen-Yuan Pang, Zhi-Xun Lin, Ying-Chieh Wang
Publikováno v:
Journal of Crystal Growth. 382:1-6
GaN films were grown by plasma-assisted molecular beam epitaxy with a sputtered AlN buffer layer on Si (100) substrate. From the analyses of X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurements, we s
Publikováno v:
Thin Solid Films. 529:470-474
Propagation characteristics of surface acoustic waves (SAWs) in the (100) ZnO/interdigital transducer (IDT)/(100) AlN/diamond structure are investigated in this study. The temperature coefficient of delay (TCD), the phase velocity, and the coupling c
Autor:
Zhi-Xun Lin, Sean Wu, Shou-Chang Cheng, Chia-Chi Shih, Shih-Bin Jhong, Kuan-Ting Liu, Kang-I Chen, Ruyen Ro, Maw-Shung Lee
Publikováno v:
Microelectronics Reliability
(1 0 3) Oriented AlN films is an attractive piezoelectric material for the applications on surface acoustic wave (SAW) and film bulk acoustic wave (FBAR) devices. As regards the SAW properties of the (1 0 3) oriented AlN films, the electromechanical
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 56:1246-1251
(100) AlN films have better surface acoustic wave (SAW) properties than (002) AlN films. In this research, (100) AlN films were combined with diamonds as a new composite SAW substrate. The SAW properties of (100) AlN films on diamonds were analyzed w
Publikováno v:
Japanese Journal of Applied Physics. 46:6719-6726
Bulk acoustic wave analysis of all crystalline-plane-oriented AlN films were studied in this research. Different crystalline-plane-oriented AlN films will form different vibration modes and acoustic properties. (002)-, (004)-, and (006)-oriented AlN
Publikováno v:
Japanese Journal of Applied Physics. 46:3471-3474
The theoretical bulk acoustic wave properties of (103)-oriented AlN films were studied in this research. The (103)-oriented AlN films provided a quasi longitudinal mode and a quasi fast shear mode. For the quasi longitudinal mode, the acoustic veloci