Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Zhi Long Yen"'
Autor:
Pradyumna Kumar Chand, Radha Raman, Zhi-Long Yen, Ian Daniell Santos, Wei-Ssu Liao, Ya-Ping Hsieh, Mario Hofmann
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100763- (2024)
The advancement of future electronic devices necessitates dielectric materials with enhanced compositional complexity and improved capabilities. We here demonstrate a gas-phase alloying approach that yields ultrathin and crystalline dielectrics with
Externí odkaz:
https://doaj.org/article/df05f0f401364de09a24c76fdb69c87e
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract 2D materials have shown great promise for novel electronic functionality. A common challenge for 2D materials‐based transistors is forming a high‐performance gate terminal due to the challenges of depositing a dielectric of sufficient qu
Externí odkaz:
https://doaj.org/article/71d1553bf00a449aa82d48519460d3e8
Autor:
Bhartendu Papnai, Ding-Rui Chen, Rapti Ghosh, Zhi-Long Yen, Yu-Xiang Chen, Khalil Ur Rehman, Hsin-Yi Tiffany Chen, Ya-Ping Hsieh, Mario Hofmann
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 972 (2024)
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of e
Externí odkaz:
https://doaj.org/article/f0b5b56fa53a4c18bde362cbefee4ccf
Autor:
Raman, Radha, Muthu, Jeyavelan, Zhi-Long Yen, Qorbani, Mohammad, Yu-Xiang Chen, Ding-Rui Chen, Hofmann, Mario, Ya-Ping Hsieh
Publikováno v:
Nanoscale Horizons; Jun2024, Vol. 9 Issue 6, p946-955, 10p
Autor:
Rapti Ghosh, Yi-Sun Kang, Kanchan Yadav, Hung-I Lin, Zhi Long Yen, Hsia-Yu Lin, Guan Zhang Lu, Raman Sankar, Ya-Ping Hsieh, Mario Hofmann, Yang-Fang Chen
Publikováno v:
ACS Applied Electronic Materials. 4:5208-5214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0be919729f71d805842c6542543465d
https://doi.org/10.1021/acsaelm.2c00871
https://doi.org/10.1021/acsaelm.2c00871
Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2
Autor:
Mukesh Singh, Rapti Ghosh, Yu-Siang Chen, Zhi-Long Yen, Mario Hofmann, Yang-Fang Chen, Ya-Ping Hsieh
Publikováno v:
RSC Advances. 12:5990-5996
Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e05ed2f2b745b6b2769fc338942286a
https://doi.org/10.1039/d1ra06933k
https://doi.org/10.1039/d1ra06933k
Publikováno v:
Sustainable Energy & Fuels. 6:4765-4778
Scheme and band diagram for Au NPs combined with a CuxO thin film are synthesized by a self-assembly process and electrochemical modification. Au/CuxO for developing carbon capture and storage performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b4278c5bf80adca7f3ca972fb2b42a2
https://doi.org/10.1039/d2se00817c
https://doi.org/10.1039/d2se00817c
Autor:
Jian-Jhang Lee, Yi-Hung Chu, Zhi-Long Yen, Jeyavelan Muthu, Chu-Chi Ting, Ssu-Yen Huang, Mario Hofmann, Ya-Ping Hsieh
Publikováno v:
Nanoscale Advances; 8/21/2023, Vol. 5 Issue 16, p4074-4079, 6p
Publikováno v:
Carbon. 165:163-168
The carrier conduction in 2D materials is more sensitive to surface-bound disorder than bulk materials and is thought to limit their achievable performance in electronic devices. To date, charged impurity scattering is considered the main source of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9d9aa4f61d590a5d4dbc080e762d49
https://doi.org/10.1016/j.carbon.2020.04.036
https://doi.org/10.1016/j.carbon.2020.04.036
Autor:
Jen-Kai Wu, Sheng-Kuei Chiu, Szu-Hua Chen, Zhi-Long Yen, Ssu-Yen Huang, Yi-Ru Luo, Mario Hofmann, Yuan Huei Chang, Ya-Ping Hsieh, Wen-Pin Hsieh, Chih-Chieh Chiang
Publikováno v:
ACS Applied Energy Materials. 2:8411-8415
Two-dimensional (2D) thermoelectrics have shown enhanced performance compared to bulk thermoelectrics but cannot easily be improved through nanostructuring, since phonon-boundary-scattering becomes...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22270bb8b02d796b7ae558335998bca5
https://doi.org/10.1021/acsaem.9b02122
https://doi.org/10.1021/acsaem.9b02122