Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Zhi Feng Lei"'
Publikováno v:
Ferroelectrics Letters Section. 48:117-127
Publikováno v:
Radiation Effects and Defects in Solids. 176:681-689
The influence of proton radiation on the achiral structural transition at 180° domain walls in tetragonal ferroelectric BaTiO3 is theoretically studied in this work. The proton-induced oxygen vacan...
Autor:
Jun-Yang Luo, Hong Zhang, Zhan-Gang Zhang, Zhi-Feng Lei, Jin-Long Guo, Guang-Hua Du, Chao Peng, YuJuan He, Xiang-Li Zhong
Publikováno v:
Microelectronics Reliability. 140:114861
Publikováno v:
SSRN Electronic Journal.
Autor:
Shao-Hua Yang, Zhan-Gang Zhang, Zhi-Feng Lei, Yun Huang, Kai Xi, Song-Lin Wang, Tian-Jiao Liang, Teng Tong, Xiao-Hui Li, Chao Peng, Fu-Gen Wu, Bin Li
Publikováno v:
Chinese Physics B. 31:126103
Based on the BL09 terminal of China Spallation Neutron Source (CSNS), single event upset (SEU) cross sections of 14 nm fin field-effect transistor (FinFET) and 65 nm quad data rate (QDR) static random-access memories (SRAMs) are obtained under differ
Autor:
Chang-Hao Sun, Chao Peng, Zhan-Gang Zhang, Jin-Bin Wang, Shao-Zhong Yue, Hong Zhang, Zi-Wen Chen, Xiao-Ping Ou-Yang, Zhi-Feng Lei, Xiang-Li Zhong
Publikováno v:
Applied Physics Letters. 121:072109
A 3-MeV proton irradiation experiment was carried out on an AlGaN/GaN high-electron-mobility-transistor (HEMT). The results showed that the device's saturation drain current decreased, the threshold voltage drifted positively, and the maximum transco
Autor:
Dong Shijian, Zhi-Feng Lei, Hong-Xia Guo, Li Bo, Ling Lyu, Xiao-ping Ouyang, Xiao-Yu Pan, Hao Ruijing, Zhong Xiangli
Publikováno v:
Acta Physica Sinica. 69:207301
In this paper, neutron-induced displacement damage effects of AlGaN/GaN High electron mobility ransistor (HEMT) device and heterostructure on the Xi’an pulse reactor are studied. The equivalent 1 MeV neutron fluence is 1 × 1014 n/cm2. The direct-c
Publikováno v:
Chinese Physics B; Jun2018, Vol. 27 Issue 6, p1-1, 1p
Publikováno v:
Chinese Physics Letters; Nov2017, Vol. 34 Issue 11, p1-1, 1p