Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Zhi Chuan Niu"'
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-8 (2021)
Abstract The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum
Externí odkaz:
https://doaj.org/article/606d881a9e6d4ae19c8a87b096269b60
Autor:
Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la
Externí odkaz:
https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376
Autor:
Jing Wang, Ying Yu, Yu-Ming Wei, Shun-Fa Liu, Juntao Li, Zhang-Kai Zhou, Zhi-Chuan Niu, Si-Yuan Yu, Xue-Hua Wang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract In this paper, we investigate second harmonic generation in a single hexagonal GaAs nanowire. An excellent frequency converter based on this nanowire excited using a femtosecond laser is demonstrated to operate over a range from 730 nm to 19
Externí odkaz:
https://doaj.org/article/640199f8b502482da2fdc132952bf089
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed B
Externí odkaz:
https://doaj.org/article/b57dd394e11843e3a57c856e0cc07d0e
Autor:
Jie Guo, Dong-Mei Wu, Xiao-Le Ma, Chao Zhang, Li-cun Sun, Dong-Wei Jiang, Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1322-1327
We demonstrate the bias-selectable mid- or long-wave infrared detectors composed by back-to-back pin-nip diodes with “M” barrier inserted in two diodes to suppress the dark current. Mid-wave infrared (MWIR) and long-wave infrared (LWIR) active re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527514daf2b8e8018e8285f87839241f
https://doi.org/10.1166/jno.2022.3302
https://doi.org/10.1166/jno.2022.3302
Autor:
Shijun Hou, Zhengfeng Guo, Tao Xiong, Xingang Wang, Juehan Yang, Yue-Yang Liu, Zhi-Chuan Niu, Shiyuan Liu, Bing Liu, Shenqiang Zhai, Honggang Gu, Zhongming Wei
Publikováno v:
Nano Research. 15:8579-8586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83572bce73904211bb93ee691a1f3fe0
https://doi.org/10.1007/s12274-022-4481-5
https://doi.org/10.1007/s12274-022-4481-5
Autor:
Wen-Guang Zhou, Dong-Wei Jiang, Xiang-Jun Shang, Dong-Hai Wu, Fa-Ran Chang, Jun-Kai Jiang, Nong Li, Fang-Qi Lin, Wei-Qiang Chen, Hong-Yue Hao, Xue-Lu Liu, Ping-Heng Tan, Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu
Publikováno v:
Chinese Physics B.
We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature-dependent S-shape behavior is observed and explained using a thermally ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ce686e4ba8c58ea99fd93aff550724d
https://doi.org/10.1088/1674-1056/accf7b
https://doi.org/10.1088/1674-1056/accf7b
Autor:
Ru Huang, Nuo Xu, Zhi-Chuan Niu, Yuxiong Long, Shu-Shen Li, Jun Z. Huang, Xiangwei Jiang, Qianqian Huang
Publikováno v:
IEEE Electron Device Letters. 41:948-951
A design of n-type InAs piezoelectric tunnel FETs (PE-TFETs), which is worth further experimental verification, is proposed for steep sub-threshold slope and studied using TCAD simulations. Piezoelectric layers (PE-layer) are inserted in gate stacks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f09c43a8f5ff6359c211ad63af11a7
https://doi.org/10.1109/led.2020.2988412
https://doi.org/10.1109/led.2020.2988412
Autor:
Junkai Jiang, Faran Chang, Wenguang Zhou, Nong Li, Weiqiang Chen, Dongwei Jiang, Hongyue Hao, Guowei Wang, Donghai Wu, Yingqiang Xu, Zhi-Chuan Niu
Publikováno v:
Chinese Physics B. 32:038503
High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of ∼ 2.1 μm as predicted from the band structure c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbdc19c38ee1426761a2fd8c8146dd37
https://doi.org/10.1088/1674-1056/acaa2e
https://doi.org/10.1088/1674-1056/acaa2e
Autor:
Qianqian Huang, Xiangwei Jiang, Yuxiong Long, Zhi-Chuan Niu, David Esseni, Shu-Shen Li, Nuo Xu, Ru Huang, Jun Z. Huang
Publikováno v:
IEEE Transactions on Electron Devices. 66:4982-4988
We propose two different designs of p-type piezoelectric (PE) FinFETs (PE-FinFETs) covering low-power (LP) and high-performance (HP) operation modes. LP mode PE-FinFETs achieve a lower OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) and HP m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90fbede7e78d79a3fc935d1aa88ff9d0
https://doi.org/10.1109/ted.2019.2940687
https://doi.org/10.1109/ted.2019.2940687