Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zheyuan Tong"'
Publikováno v:
2021 3rd International Conference on Artificial Intelligence and Advanced Manufacture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac20f41188792da1a58fbf1b9a6103ef
https://doi.org/10.1145/3495018.3501080
https://doi.org/10.1145/3495018.3501080
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
As CMOS is being scaled down to 28nm node and beyond, it is necessary to reduce k value in order to improve RC delay. ULK (ultra-low k) (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589a5a82d0a1c112ac1070f222417870
https://doi.org/10.1109/cstic.2018.8369280
https://doi.org/10.1109/cstic.2018.8369280
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
The long-term reliability of ultralow-k (ULK) and copper/barrier metal, especially for time-dependent dielectric breakdown (TDDB) and electro-migration (EM), in Cu/ULK interconnects is rapidly becoming one of the most critical challenges for technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840eb9dd044651155aa1ff688d3c65fe
https://doi.org/10.1109/iitc-amc.2016.7507734
https://doi.org/10.1109/iitc-amc.2016.7507734
Publikováno v:
Japanese Journal of Applied Physics. 56:07KF01
Ultralow-k (ULK) film deposition and UV curing process were studied to explore the effects on the mechanical, electrical and chemical properties of ULK dielectrics. UV curing process plays an important role to enhance the Young's modulus (mechanical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fca0a9b924f10e5b5e7fd6cf04801766
https://doi.org/10.7567/jjap.56.07kf01
https://doi.org/10.7567/jjap.56.07kf01
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC); 2016, p209-211, 3p
Publikováno v:
Japanese Journal of Applied Physics; Jul2017, Vol. 56 Issue 7S2, p1-1, 1p