Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Zhenrong Jin"'
Autor:
Arifuzzaman (Arif) Sheikh, J. Chen, Michael V. Aquilino, Mukesh Khare, James Chingwei Li, Weipeng Li, X. Chen, Laegu Kang, G. Massey, J. Sudijono, An L. Steegen, Vijay Narayanan, Jin-Ping Han, M. Zaleski, Rashmi Jha, Haoren Zhuang, M. Chowdhury, C. Reddy, Douglas D. Coolbaugh, Yi-Wei Lee, Michael P. Chudzik, Kenneth J. Stein, Zhenrong Jin, Shesh Mani Pandey, D. Tekleab, S. Samavedam, Christopher V. Baiocco, Haining Yang, Deleep R. Nair, JiYeon Ku, Chandrasekharan Kothandaraman, Craig S. Lage, Jaeger Daniel, R. Mo, C. Hobbs, S. Kalpat, Da Zhang, Naim Moumen, Nam-Sung Kim, S. Kirshnan, J. Wallner, X. Wang, R. Lindsay, Melanie J. Sherony, Aaron Thean, Young Way Teh
For the first time, we have demonstrated a 32nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 μm2. Record NMOS/PMOS drive currents of 1000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad4bb3545ca27a0a35b2cac57515af2c
https://doi.org/10.1109/vlsit.2008.4588573
https://doi.org/10.1109/vlsit.2008.4588573
Autor:
Zhenrong Jin, John D. Cressler, B. El-Kareh, Enhai Zhao, Hiroshi Yasuda, Akil K. Sutton, R. Krithivasan, S. Balster
Publikováno v:
IEEE Transactions on Electron Devices. 53:329-338
We present a comprehensive investigation of low-frequency noise behavior in complementary (n-p-n + p-n-p) SiGe heterojunction bipolar transistors (HBTs). The low-frequency noise of p-n-p devices is higher than that of n-p-n devices. Noise data from d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::386bc02dc541236099e349de80d73d3e
https://doi.org/10.1109/ted.2005.862698
https://doi.org/10.1109/ted.2005.862698
Autor:
Yi-Jan Emery Chen, Gregory G. Freeman, J. Laskar, Zhenrong Jin, Jong-Soo Lee, Wei-Min Lance Kuo, John D. Cressler, Y.V. Tretiakov
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:1672-1681
An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7f4a2a814e03c4e8ab143ddf38d131
https://doi.org/10.1109/tmtt.2005.847063
https://doi.org/10.1109/tmtt.2005.847063
Autor:
Alvin J. Joseph, Qingqing Liang, John D. Cressler, Wei-Min Lance Kuo, Tianbing Chen, Enhai Zhao, Zhenrong Jin
Publikováno v:
IEEE Transactions on Electron Devices. 51:1825-1832
A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec037e98834d037e8cf16ff0917fe46f
https://doi.org/10.1109/ted.2004.836779
https://doi.org/10.1109/ted.2004.836779
Autor:
Greg Freeman, Alvin J. Joseph, Jae-Sung Rieh, Yan Cui, Jarle André Johansen, Dave Ahlgren, Guofu Niu, Qingqing Liang, John D. Cressler, Zhenrong Jin
Publikováno v:
Solid-State Electronics. 48:1897-1900
The low-frequency noise in high-speed transistors generally increases (degrades) as device technologies down-scale for higher performance. Interestingly, the latest generation of deep-submicron SiGe HBTs breaks this trend, and we find record-low nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59a548bb7e518893679693a89b9fd4f6
https://doi.org/10.1016/j.sse.2004.05.032
https://doi.org/10.1016/j.sse.2004.05.032
Autor:
Zhenrong Jin, Jarle André Johansen, Robert A. Reed, John D. Cressler, Paul W. Marshall, Alvin J. Joseph
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1816-1820
We use proton irradiation to probe the origins of the geometry-dependent variation of low-frequency noise in 120 GHz SiGe heterojunction bipolar transistors (HBTs). Before irradiation, small-sized transistors show a strong variation in noise magnitud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5291a51c861b92017865c7075e09e4
https://doi.org/10.1109/tns.2003.820739
https://doi.org/10.1109/tns.2003.820739
Publikováno v:
IEEE Transactions on Electron Devices. 50:676-682
The influence of geometrical scaling on low-frequency noise in SiGe HBTs is presented. Small-size transistors show a strong variation in noise across many samples, whereas the noise in larger devices is more statistically reproducible. This size-depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfaa0331cb2dfbdbfac97af095e7781
https://doi.org/10.1109/ted.2003.810483
https://doi.org/10.1109/ted.2003.810483
Autor:
Guofu Niu, Hak Kim, John D. Cressler, Robert A. Reed, Zhenrong Jin, Paul W. Marshall, Alvin J. Joseph
Publikováno v:
Solid-State Electronics. 47:39-44
The influence of proton exposure on the low-frequency noise of 0.20 μm UHV/CVD SiGe HBTs is presented. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previously developed noise theory is used to underst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23fa5dc79e9142cda772a3f0f01b8b98
https://doi.org/10.1016/s0038-1101(02)00251-4
https://doi.org/10.1016/s0038-1101(02)00251-4
Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications
Autor:
David L. Harame, Alvin J. Joseph, Zhenrong Jin, John D. Cressler, Jin Tang, Shiming Zhang, Guofu Niu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:2467-2473
We present the first systematic experimental and modeling results of noise corner frequency (f/sub C/) and noise corner frequency to cutoff frequency ratio (f/sub C//f/sub T/) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c7151724b322967bad9ee2948070128
https://doi.org/10.1109/tmtt.2002.804519
https://doi.org/10.1109/tmtt.2002.804519
Autor:
Zhenrong Jin, Robert D. Johnson, Guofu Niu, David L. Harame, Shiming Zhang, Gang Zhang, Alvin J. Joseph, Lou Lanzerotti, John D. Cressler
Publikováno v:
Solid-State Electronics. 46:655-659
A comprehensive investigation of electric field effects associated with the backside Ge profile in SiGe heterojunction bipolar transistors (HBTs) is conducted using calibrated simulations. We show for the first time that the backside Ge retrograde ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf88710f2a50f4c05a7cdb1ca2f45c6
https://doi.org/10.1016/s0038-1101(01)00333-1
https://doi.org/10.1016/s0038-1101(01)00333-1