Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zhenping Wen"'
Autor:
Tao Xing, Li Li, Xiaosong Rao, Jing Zhao, Yiran Chen, Gaoda Ju, Yaping Xu, Xuan Gao, Guilan Dong, Xuefeng Xia, Yanfang Guan, Lingling Zhang, Zhenping Wen, Jun Liang
Publikováno v:
BMC Gastroenterology, Vol 24, Iss 1, Pp 1-14 (2024)
Abstract Background Exploring predictive biomarkers and therapeutic strategies of ICBs has become an urgent need in clinical practice. Increasing evidence has shown that ARID1A deficiency might play a critical role in sculpting tumor environments in
Externí odkaz:
https://doaj.org/article/8470c5b166464a54a4dcb8ab13110c6c
Autor:
Zhenping Wen, Xiuhua Fu, Gaowa Jin, Yonggang Liu, Qiong Qin, Shun Lu, Weidong Guo, Zhiying Meng, Yongqiang Gao, Xiaolan Wang, Xiaoqiong Jia, Haifei Zhou, Xiaohong Wang, Fengyun Wang, Shubin Wang, Xiaoyu Shi, Yingchun Qin, Jing Wang, Yun Wu, Xiaoxing Su
Publikováno v:
Ann Transl Med
Background Activated epidermal growth factor receptor (EGFR) mutation is the main pathogenic cause of non-small cell lung cancer (NSCLC) in Asia. However, the impact of plasma EGFR mutation abundance, especially of the ultra-low abundance of EGFR mut
Publikováno v:
Journal of B.U.ON. : official journal of the Balkan Union of Oncology. 24(5)
To observe the mechanism of the effects of Apatinib on the proliferation and apoptosis of human gastric cancer (HGC-27) cells via the phosphatidylinositol 3-kinase (PI3K)/protein kinase B (Akt) signaling pathway through in vitro cytology experiments.
Autor:
Xiaosong Rao, Yaping Xu, Yanfang Guan, Zhenping Wen, Xuan Gao, Han Wang, Xuefeng Xia, Guilan Dong, Yiran Chen, Jing Zhao, Jun Liang, Tao Xing, Li Li
Publikováno v:
Cancer Research. 81:2739-2739
Background: As the function of ARID1A loss is controversial in liver cancer, we aim to elucidate how this most frequently mutated SWI/SNF gene would affect the biological process in patients with HBV related hepatocarcinoma, a common type of liver ca
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
A NiPt silicide for CMOS ohmic contact formation process extended from 65nm to 28nm node has been achieved by co-optimization of NiPt alloy deposition thickness, Pt additive amount complementary wet selective etch process. In this study, a lower RTP-
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-3, 3p