Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Zhenkun Tang"'
Autor:
Zhenkun Tang, Yuanfang Liu, Yiyi Cheng, Yelong Liu, Yanghua Wang, Qiao He, Rongqi Qin, Wenrui Li, Yi Lei, Haizhou Liu
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract This study aimed to elucidate the effects of long day and night shifts on immune cells in a population of nurses. This cross-sectional study in December 2019 was based on a group of nurses. 1568 physically healthy caregivers were included, i
Externí odkaz:
https://doaj.org/article/b8d74834929749d0896b73074cb43ea5
Autor:
Zuocheng Li, Xingxu Yan, Zhenkun Tang, Ziyang Huo, Guoliang Li, Liying Jiao, Li-Min Liu, Miao Zhang, Jun Luo, Jing Zhu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of mult
Externí odkaz:
https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad
Publikováno v:
Transportation Research Record: Journal of the Transportation Research Board. 2677:1340-1356
Dynamic traffic assignment (DTA) methods have been developed fruitfully in theory but are limited in application. Reasons may include the high computational complexity, the difficulty in model calibration, and the reliance on accurate and complete or
Autor:
Yongsheng Yao, Wenjin Yin, Zhenkun Tang, Yimin Xu, Jiayi Guo, Juexian Cao, Heqin Wang, Xiaolin Wei
Publikováno v:
The Journal of Physical Chemistry C. 126:1271-1280
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 152:115748
Publikováno v:
SSRN Electronic Journal.
Autor:
Qian-Kui Zhang, Wen-Hui Zhao, Zhong-Peng Zhou, Lie-Mao Cao, Wen-Jin Yin, Xiao-Lin Wei, Zhenkun Tang, Hui Zhang
Publikováno v:
SSRN Electronic Journal.
Autor:
Xiaohui Deng, Zhenkun Tang
Publikováno v:
Europhysics Letters. 140:16002
The ultra-wide single spin states are of importance for ideal magnetic storage materials and spin injection sources. Here, a new type of CrOX (X = Cr, Br, I) monolayer has been revealed. We find that the basic constructive units for such new monolaye
Publikováno v:
Applied Physics Letters. 121:113104
Forming a low-resistance semiconductor–metal contact is a critical step to achieve a high-performance two-dimensional (2D) semiconductor nanoelectronic device. Motivated by the recent discovery of monolayer γ-GeSe with exceptional high electrical
Autor:
Giorgio Rossi, Ivana Vobornik, Pranab Kumar Das, Annabella Selloni, Tommaso Pincelli, Pasquale Orgiani, Phil D. C. King, Gian Marco Pierantozzi, Jun Fujii, Goran Drazic, Deepnarayan Biswas, Zhenkun Tang, Chiara Bigi, Alessandro Troglia, Giancarlo Panaccione, Anna Regoutz, Tien-Lin Lee, Alberto Verdini, Regina Ciancio
Publikováno v:
Physical Review Materials. 4
Two-dimensional (2D) metallic states induced by oxygen vacancies (${V}_{O}\mathrm{s}$) at oxide surfaces and interfaces provide opportunities for the development of advanced applications, but the ability to control the behavior of these states is sti