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pro vyhledávání: '"Zhengwei W. Chen"'
Publikováno v:
Frontiers in Materials, Vol 8 (2021)
Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurr
Externí odkaz:
https://doaj.org/article/c918f82f53464393b164a9f220ef9e8a