Zobrazeno 1 - 10
of 169
pro vyhledávání: '"Zhengsheng Han"'
Publikováno v:
Eng, Vol 2, Iss 4, Pp 620-631 (2021)
The fin field-effect transistor (FinFET) has been the mainstream technology on the VLSI platform since the 22 nm node. The silicon-on-insulator (SOI) FinFET, featuring low power consumption, superior computational power and high single-event effect (
Externí odkaz:
https://doaj.org/article/ca0cb8aae8984beb9068ad47b4840cf0
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1225 (2023)
A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance (Ron,sp) is proposed, and the physical mechanism is investigated by Sentaurus. It features a FIN gate and an extended superjunction trench gate to obtain a Bulk Electron Acc
Externí odkaz:
https://doaj.org/article/a421316f134d41ef8d82b814ffb24a2c
Publikováno v:
IEEE Access, Vol 7, Pp 183589-183595 (2019)
A novel Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) with Lateral Free-Wheeling Diode (FWD) integrated in the Termination is proposed and investigated by simulation, named LDT-RC-IGBT. Firstly, the Equi-Potential Ring (EPR) of the t
Externí odkaz:
https://doaj.org/article/fe3c82746f224ca7800fbae97166a9ef
Autor:
Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han
Publikováno v:
IEEE Access, Vol 7, Pp 115989-115996 (2019)
This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO2 back-gate interface of SOI NMOSFETs during irradiation are studi
Externí odkaz:
https://doaj.org/article/7b5b4e9de4a24c5abd06e3116124ac73
Publikováno v:
Applied Sciences, Vol 12, Iss 7, p 3649 (2022)
This paper presents a 19 ps precision and 170 M samples/s time-to-digital converter (TDC) in FPGA. Through the direct count method and tapped delay line method, the coarse count and fine count can be extracted, respectively. The direct count is reali
Externí odkaz:
https://doaj.org/article/5953dadb8cb84d71a8233a85cde50427
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 708-713 (2018)
A novel lateral double diffused metal oxide semiconductor (LDMOS) with trench oxide layer, featuring a lateral super junction structure based on the silicon-on-insulator technology is proposed. On the one hand, the lateral super junction combined wit
Externí odkaz:
https://doaj.org/article/3ed4fe158ae045d1a4d8677ae8515ee2
Autor:
Duoli, Li, Chuanbin, Zeng, Wei, Dou, Linchun, Gao, Weiwei, Yan, Bo, Li, Yang, Huang, Tao, Liu, Long, Xing, Hainan, Liu, Jiajun, Luo, Zhengsheng, Han
Publikováno v:
In Microelectronics Reliability September 2019 100-101
Publikováno v:
IEEE Transactions on Electron Devices. 70:1751-1756
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d693ee4f6d5d7c19bbf0fd5625e5798b
https://doi.org/10.1109/ted.2023.3241880
https://doi.org/10.1109/ted.2023.3241880
Autor:
Peng Lu, Maguang Zhu, Peixiong Zhao, Chenwei Fan, Huiping Zhu, Jiantou Gao, Can Yang, Zhengsheng Han, Bo Li, Jie Liu, Zhiyong Zhang
Publikováno v:
ACS Applied Materials & Interfaces. 15:10936-10946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::997b74a69e905988f1b332e2bcf4b859
https://doi.org/10.1021/acsami.2c20005
https://doi.org/10.1021/acsami.2c20005
Autor:
Yuexin Gao, Xiaowu Cai, Zhengsheng Han, Yun Tang, Liqiang Ding, Ruirui Xia, Mali Gao, Fazhan Zhao
Publikováno v:
Journal of Power Electronics. 23:779-788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cf9819bfbe7f354e919e77a5832595
https://doi.org/10.1007/s43236-022-00570-3
https://doi.org/10.1007/s43236-022-00570-3