Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Zhengliang Bian"'
Autor:
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen Boyd, Srabanti Chowdhury
Publikováno v:
IEEE Access, Vol 12, Pp 123224-123235 (2024)
In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of param
Externí odkaz:
https://doaj.org/article/0dcf7a2591e947b6bcf6640c37b61d9e
Autor:
Kelly Woo, Zhengliang Bian, Maliha Noshin, Rafael Perez Martinez, Mohamadali Malakoutian, Bhawani Shankar, Srabanti Chowdhury
Publikováno v:
JPhys Materials, Vol 7, Iss 2, p 022003 (2024)
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material c
Externí odkaz:
https://doaj.org/article/3766fe074b8c43de93e0cef1dab58df8
Autor:
Dong Ji, Ke Zeng, Zhengliang Bian, Bhawani Shankar, Brendan P. Gunning, Andrew Binder, Jeramy R. Dickerson, Ozgur Aktas, Travis J. Anderson, Robert J. Kaplar, Srabanti Chowdhury
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 030703-030703-8 (2022)
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the
Externí odkaz:
https://doaj.org/article/f3c09ca633544dbf89883e18c18fcb93
Autor:
Xinyu Zhou, Mohamadali Malakoutian, Rohith Soman, Zhengliang Bian, Rafael Perez Martinez, Srabanti Chowdhury
Publikováno v:
IEEE Transactions on Electron Devices. 69:6650-6655
Publikováno v:
IEEE Electron Device Letters. 43:1527-1530
Publikováno v:
IEEE Electron Device Letters. 43:596-599
Autor:
Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Xinyuan Liu, Yilong Ren, Jianbin Luo, Zhengliang Bian, Lin Zhang, Guoxin Xie, Shizhu Wen, Shuai Wu, Feng He, Dan Guo, Haijun Yang
Publikováno v:
ACS applied materialsinterfaces. 12(6)
The interfaces between two-dimensional (2D) materials and the silicon dioxide (SiO2)/silicon (Si) substrate, generally considered as a solid-solid mechanical contact, have been especially emphasized for the structure design and the property optimizat
Publikováno v:
Nano Letters. 18:5618-5627
Due to its innate instability, the degradation of black phosphorus (BP) with oxygen and moisture was considered the obstacle for its application in ambient conditions. Here, a friction force reduced by about 50% at the degraded area of the BP nanoshe
Publikováno v:
Small. 15:1904613
Understanding the nanoscale friction properties of 2D materials and further manipulating their friction behaviors is of great significance for the development of various micro/nanodevices. Recent studies, taking advantage of the close relationship be