Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Zhengfang Luan"'
Autor:
Yang Liu, Yuanjie Lv, Shuoshuo Guo, Zhengfang Luan, Aijie Cheng, Zhaojun Lin, Yongxiong Yang, Guangyuan Jiang, Yan Zhou
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing
Externí odkaz:
https://doaj.org/article/9c65e83a6bd44084aa99047da9a28750
Autor:
Shuoshuo Guo, Yang Liu, Guangyuan Jiang, Yan Zhou, Zhengfang Luan, Yuanjie Lv, Aijie Cheng, Zhaojun Lin, Yongxiong Yang
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the widt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::089c36df4e99f8baa90c73ba8710fd4e
http://europepmc.org/articles/PMC8599847
http://europepmc.org/articles/PMC8599847