Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Zhengang Ju"'
Publikováno v:
Journal of Alloys and Compounds. 485:794-797
Cubic MgZnO thin films were prepared on fused quartz substrate by radio frequency (rf) reaction magnetron co-sputtering technique, and composition modulation of cubic MgZnO films could be accomplished by changing rf power on Zn metal target. During g
Autor:
Zhengang Ju, B. Yao, Y.M. Lu, Junrong Zhang, Binyao Li, Z.Z. Zhang, D.X. Zhao, Kewei Liu, Xiukun Wu, D.Z. Shen
Publikováno v:
Journal of Crystal Growth. 307:26-29
Photoluminescence of CdSe thin films under different growth conditions was studied in this paper, and typical double emission peaks were observed at room temperature. Temperature and excitation intensity-dependent photoluminescence studies in combina
Autor:
Yun Ji, Zhengang Ju, Zabu Kyaw, Wei Liu, Zi-Hui Zhang, Shunpeng Lu, Yiping Zhang, Swee Tiam Tan, Binbin Zhu, Xueliang Zhang, Namig Hasanov, Hilmi Volkan Demir, Xiao Wei Sun
Publikováno v:
Optics Express
In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. LTM-LED chips in 25 × 25 μ
Autor:
Zhengang Ju, Wei Liu, Zabu Kyaw, Bin Bin Zhu, Yun Ji, Zi-Hui Zhang, Shunpeng Lu, Liancheng Wang, Xiao Wei Sun, Yiping Zhang, Swee Tiam Tan, Namig Hasanov, Xue Liang Zhang, Hilmi Volkan Demir
Publikováno v:
Optics Express
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42e15fc26ac457e0fe8fa7dc7770b978
https://hdl.handle.net/11693/23148
https://hdl.handle.net/11693/23148
Autor:
Zi-Hui Zhang, Xiao Wei Sun, Zhengang Ju, Wei Liu, Hilmi Volkan Demir, Xueliang Zhang, Swee Tiam Tan, Yun Ji, Namig Hasanov, Zabu Kyaw
Publikováno v:
Optics Letters
Cataloged from PDF version of article. The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, becau
Autor:
Namig Hasanov, Xue Liang Zhang, Yun Ji, Shunpeng Lu, Zhengang Ju, Wei Liu, Yiping Zhang, Swee Tiam Tan, Binbin Zhu, Sun Xiao Wei, Zabu Kyaw, Hilmi Volkan Demir, Jinghua Teng, Zi-Hui Zhang
Publikováno v:
Applied Physics Letters
A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0f3b56d07d0cd45fc4334b8d4dd3369
https://hdl.handle.net/11693/12815
https://hdl.handle.net/11693/12815
Autor:
Hilmi Volkan Demir, Xue Liang Zhang, Yun Ji, Binbin Zhu, Namig Hasanov, Zhengang Ju, Xiao Wei Sun, Shunpeng Lu, Wei Liu, Zi-Hui Zhang, Zabu Kyaw, Yiping Zhang, Swee Tiam Tan
Publikováno v:
Optics Express
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26feadc649848dfe12c9df047663f906
https://hdl.handle.net/11693/12826
https://hdl.handle.net/11693/12826
Autor:
Namig Hasanov, Xiao Wei Sun, Shunpeng Lu, Zabu Kyaw, Yiping Zhang, Swee Tiam Tan, Hilmi Volkan Demir, Yun Ji, Xueliang Zhang, Binbin Zhu, Zhengang Ju, Wei Liu, Zi-Hui Zhang
Publikováno v:
Applied Physics Letters
In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebbdde2c713b460d3db8a247581dc7f6
https://hdl.handle.net/11693/26613
https://hdl.handle.net/11693/26613
Autor:
Zhengang Ju, Wei Liu, Xueliang Zhang, Yun Ji, Liancheng Wang, Hilmi Volkan Demir, Swee Tiam Tan, Zi-Hui Zhang, Xiao Wei Sun, Zabu Kyaw
Publikováno v:
Applied Physics Letters
InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab80ce995a862c2c96cdd50b95e2d1b4
https://hdl.handle.net/11693/25891
https://hdl.handle.net/11693/25891
Autor:
Yun Ji, Steven P. DenBaars, Handong Sun, Xiao Wei Sun, Swee Tiam Tan, Rui Chen, Yuji Zhao, Zi-Hui Zhang, Hilmi Volkan Demir, Zhengang Ju, Wei Liu, Talha Erdem, Shuji Nakamura, Xueliang Zhang
Publikováno v:
Applied Physics Letters
The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b6436e1a2f2374609028ce862603140
https://hdl.handle.net/11693/12814
https://hdl.handle.net/11693/12814