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pro vyhledávání: '"Zheng-Lun Feng"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 353-357 (2016)
The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface. However, a positive threshold volt
Externí odkaz:
https://doaj.org/article/537d8c1788ee4cf5a23fcac01f7fcbbd
Autor:
Zheng-Lun Feng, 馮正倫
105
The high density of defect states in a-IGZO causes device instability. The a-IGZO thin film transistors (TFTs) reportedly suffer from positive threshold voltage (VT) shift after positive bias stress (PBS) and negative VT shift after negative
The high density of defect states in a-IGZO causes device instability. The a-IGZO thin film transistors (TFTs) reportedly suffer from positive threshold voltage (VT) shift after positive bias stress (PBS) and negative VT shift after negative
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/uqz84x
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 353-357 (2016)
The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface. However, a positive threshold volt