Zobrazeno 1 - 10
of 1 193
pro vyhledávání: '"Zheng Youdou"'
Autor:
Ye Fan, Pivnenko Mike, Huang Huiyu, Chang Xin, Robinson Lee, Zheng Youdou, Shi Yi, Chu Daping
Publikováno v:
Nanophotonics, Vol 12, Iss 17, Pp 3435-3442 (2023)
We introduce two types of dielectric metasurfaces, consisting of 3 × 3 regions, which manipulate wavefront by different feature heights. Both polarization-dependent and polarization-independent metasurfaces are realized for phase depth of 0 ∼ 2π
Externí odkaz:
https://doaj.org/article/4988aead0b834fb28b70216f23e3d63c
Autor:
Ye Fan, Cheng Fengmin, Jia Zhiwei, Zhang Jinchuan, Zhuo Ning, Liu Fengqi, Zheng Youdou, Shi Yi
Publikováno v:
Nanophotonics, Vol 12, Iss 10, Pp 1903-1912 (2023)
We report on an index-coupled distributed feedback (DFB) quantum cascade lasers (QCLs) of high single-mode stability by using of a grating reflector (GR) to reflect effectively light of a specific wavelength. Fabrications of the QCLs were performed w
Externí odkaz:
https://doaj.org/article/1eb615b8041c4f4f999802c04bb6e28a
Autor:
Zhang Liying, Xiu Xiangqian, Li Yuewen, Zhu Yuxia, Hua Xuemei, Xie Zili, Tao Tao, Liu Bin, Chen Peng, Zhang Rong, Zheng Youdou
Publikováno v:
Nanophotonics, Vol 9, Iss 15, Pp 4497-4503 (2020)
Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height o
Externí odkaz:
https://doaj.org/article/ef5e7bfb83604301b6c81e589c401fa2
Autor:
Pan Lijia, Shi Yi, Zheng Youdou, Gong Zhihong, Ji Guangbin, Zheng Mingbo, Chang Xiaofeng, Dai Weijie
Publikováno v:
Nanoscale Research Letters, Vol 4, Iss 11, Pp 1257-1262 (2009)
Abstract Mesoporous silica nanofibers were synthesized within the pores of the anodic aluminum oxide template using a simple sol–gel method. Transmission electron microscopy investigation indicated that the concentration of the structure-directing
Externí odkaz:
https://doaj.org/article/ddfb3b23d8d34767bc851d79f3577ac7
Autor:
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Zhang, Rong, Zheng, Youdou
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (
Externí odkaz:
http://arxiv.org/abs/2206.07881
Autor:
Zhao, Weikang, Teng, Yan, Tang, Kun, Zhu, Shunming, Yang, Kai, Fan, Kangkang, Zhao, Gengyou, Gu, Liangxue, Feng, Bo, Zhang, Rong, Zheng, Youdou, Gu, Shulin
Publikováno v:
In Diamond & Related Materials August 2024 147
Autor:
Feng, Bo, Tang, Kun, Yang, Kai, Zhao, Gengyou, Gu, Liangxue, Fan, Kangkang, Zhu, Shunming, Zheng, Youdou, Gu, Shulin
Publikováno v:
In Materials Today Communications December 2024 41
Autor:
Bai, Haineng, Feng, Cheng, Chen, Yiru, Yan, Yali, Feng, Yamin, Liu, Kuili, Zhang, Baohua, Wang, Jin, Chen, Dunjun, Zheng, Youdou, Guo, Fuqiang
Publikováno v:
In Sensors and Actuators: B. Chemical 1 December 2024 420
Autor:
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting
Externí odkaz:
http://arxiv.org/abs/2108.06679
Autor:
Xu, Ru, Chen, Peng, Liu, Xiancheng, Zhao, Jianguo, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Wan, Fayu, Chang, Jianhua, Zhang, Rong, Zheng, Youdou
Publikováno v:
In Chip March 2024 3(1)