Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Zheng Yong-zhen"'
Publikováno v:
In Journal of Materials Research and Technology November-December 2021 15:2439-2444
Publikováno v:
Chinese Physics B. 18:5406-5413
Injection of high-Z impurities into plasma has been proved to be able to reduce the localized thermal load and mechanical forces on the in-vessel components and the vacuum vessel, caused by disruptions in Tokamaks. An advanced prediction and mitigati
Autor:
Deng Wei, Pan Yudong, Zhang Peng, Cui Zheng-Ying, Shi Zhongbing, Huang Yuan, Zheng Yong-Zhen, Sun Ping, Zhou Yan, Yang Qingwei, Chen Wei
Publikováno v:
Chinese Physics. 16:3451-3457
This paper describes the behaviour of impurity transport in HL-2A ohmic discharges. In 2005, small quantities of metallic impurities (Al, Ni and Ti) were successfully injected into HL-2A plasmas by laser blow-off technique, and their progression was
Publikováno v:
Chinese Physics. 16:1084-1088
There are two different definitions for specifying the mean effective ion charge Zeff in plasmas: a) from the Spizer electrical resistivity of the plasma and b) from bremsstrahlung radiation losses of the plasma. In this paper Zeff in the centre of t
Autor:
Zhang Peng, Sun Ping, Lu Jie, Huang Yuan, Zheng Yong-Zhen, Yang Qingwei, Ding Xuan-Tong, Dong Yun-Bo, Cui Zheng-Ying, Shi Pei-Lan, Deng Wei, Fu Bingzhong, Pan Yudong
Publikováno v:
Chinese Physics Letters. 23:2143-2146
Non-recycling impurities are injected into ohmic HL-2A plasma for the first time. The impurities of titanium and aluminium are injected in the discharges with varying plasma density and current. The convection and diffusion process of the injected im
Autor:
Zheng Yong-zhen
Publikováno v:
Plasma Science and Technology. 8:381-384
A simple one-dimensional numerical model including generation, acceleration and loss effects for runaway electrons are used to deduce the runaway energy ?r. The simulation results are presented in a form of a scaling law of ?r on plasma parameters. T
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Publikováno v:
Plasma Science and Technology. 3:897-902
Hard alloy were implanted with a dual-ion of nitrogen and tantalum at temperature of 100 ?C and 400 ?C at a dose of 8?1017 ions cm-2. Auger electron spectroscopy (AES) was used to determine the nitrogen and tantalum concentration profiles. Microhardn
Publikováno v:
Plasma Science and Technology. 3:721-726
In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600°C with a dose of 4×1018 ions cm-2. Using the Plasma Source Ion Implantatio
Akademický článek
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