Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Zheng Ying Wang"'
Publikováno v:
RSC Advances; 2024, Vol. 14 Issue 18, p12883-12887, 5p
Publikováno v:
Gastroenterology Research and Practice, Vol 2020 (2020)
Background. Serum alanine aminotransferase (ALT) activity was measured not only to detect liver disease, but also to monitor overall health. The purpose of this study was to obtain the prevalence of elevated ALT levels among adolescents. Methods. In
Externí odkaz:
https://doaj.org/article/e87845971f4241ce814b42b0b91ae221
Autor:
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://doaj.org/article/542e8768d7ce43eeb099863d27bfde87
Publikováno v:
Sensors, Vol 18, Iss 9, p 2795 (2018)
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (
Externí odkaz:
https://doaj.org/article/c046bc9520bc48268bed684bdcada48b
Autor:
H.-Y. Chen, C.-Y. Liao, Ming-Han Liao, Shu-Tong Chang, Zheng-Ying Wang, Yu-Chen Chou, Ruo-Chun Hong, Min-Hung Lee, C. Lo, Pin-Guang Chen, Siang-Sheng Gu, Shih-Yao Chen, Kai-Shin Li, Kuan-Ting Chen, Gao-Yu Siang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8003e310c78d3208cac7654f7280a3f5
https://ieeexplore.ieee.org/document/8425629/
https://ieeexplore.ieee.org/document/8425629/
Autor:
Kai Wei Zhuang, Zheng Ying Wang, Cheng Hsiung Peng, Pang-Shiu Chen, Su Ching Chiu, Tzu Wei Lin, Sheng Wei Lee
Publikováno v:
Ceramics International. 43:308-315
In this study, amorphous MoO x films and Ag metal films were deposited on soda-lime glass via a sputtering system at room temperature. The experimental results indicate that MoO x films prepared with a 6% O 2 /Ar flow rate exhibit an amorphous phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc074a2210eb3dc6a5e5da658ff8353f
https://doi.org/10.1016/j.ceramint.2016.09.157
https://doi.org/10.1016/j.ceramint.2016.09.157
Autor:
Kai-Chi Chuang, Zheng Ying Wang, Hao Tung Chung, Yi-Shao Li, Wei-Shuo Li, Kai Shin Li, Chan Yu Liao, Siang Sheng Gu, He Xin Zhang, Jun-Dao Luo, Huang-Chung Cheng, Yun Tien Yeh, Min-Hung Lee
Publikováno v:
Japanese Journal of Applied Physics. 58:SDDE07
Modulating the water pulse time during thermal atomic layer deposition is an effective approach to enhancing the ferroelectric properties of undoped HfO2 thin films. Through grazing incidence X-ray diffraction (GI-XRD), it was observed that a shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f4140314f2a41804103ab0d8ba77a5
https://doi.org/10.7567/1347-4065/ab0ded
https://doi.org/10.7567/1347-4065/ab0ded
Publikováno v:
Pedosphere. 21:373-379
Soil water-retention characteristics at measurement scales are generally different from those at application scales, and there is scale disparity between them and soil physical properties. The relationships between two water-retention parameters, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ec77594b654727fe942e219b921672
https://doi.org/10.1016/s1002-0160(11)60138-0
https://doi.org/10.1016/s1002-0160(11)60138-0
Publikováno v:
Sensors
Volume 18
Issue 9
Sensors, Vol 18, Iss 9, p 2795 (2018)
Volume 18
Issue 9
Sensors, Vol 18, Iss 9, p 2795 (2018)
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<
60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The mate
60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae632dba0ed5c950305105875b794d9f
https://doi.org/10.3390/s18092795
https://doi.org/10.3390/s18092795
Publikováno v:
Sensors (14248220); Sep2018, Vol. 18 Issue 9, p2795, 7p