Zobrazeno 1 - 10
of 1 193
pro vyhledávání: '"Zheng, Youdou"'
Autor:
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Zhang, Rong, Zheng, Youdou
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (
Externí odkaz:
http://arxiv.org/abs/2206.07881
Autor:
Zhao, Weikang, Teng, Yan, Tang, Kun, Zhu, Shunming, Yang, Kai, Fan, Kangkang, Zhao, Gengyou, Gu, Liangxue, Feng, Bo, Zhang, Rong, Zheng, Youdou, Gu, Shulin
Publikováno v:
In Diamond & Related Materials August 2024 147
Autor:
Feng, Bo, Tang, Kun, Yang, Kai, Zhao, Gengyou, Gu, Liangxue, Fan, Kangkang, Zhu, Shunming, Zheng, Youdou, Gu, Shulin
Publikováno v:
In Materials Today Communications December 2024 41
Autor:
Bai, Haineng, Feng, Cheng, Chen, Yiru, Yan, Yali, Feng, Yamin, Liu, Kuili, Zhang, Baohua, Wang, Jin, Chen, Dunjun, Zheng, Youdou, Guo, Fuqiang
Publikováno v:
In Sensors and Actuators: B. Chemical 1 December 2024 420
Autor:
Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting
Externí odkaz:
http://arxiv.org/abs/2108.06679
Autor:
Xu, Ru, Chen, Peng, Liu, Xiancheng, Zhao, Jianguo, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Wan, Fayu, Chang, Jianhua, Zhang, Rong, Zheng, Youdou
Publikováno v:
In Chip March 2024 3(1)
Autor:
Mao, Xiaokang, Yu, Zhiguo, Che, Peng, Zhou, Jing, Li, Yuyin, Feng, Jianbo, Xie, Zili, Zhao, Hong, Chen, Dunjun, Xiu, Xiangqian, Wang, Ke, Shi, Yi, Zhang, Rong, Zheng, Youdou
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by using Ni n
Externí odkaz:
http://arxiv.org/abs/2104.00849
Autor:
Ye Fan, Pivnenko Mike, Huang Huiyu, Chang Xin, Robinson Lee, Zheng Youdou, Shi Yi, Chu Daping
Publikováno v:
Nanophotonics, Vol 12, Iss 17, Pp 3435-3442 (2023)
We introduce two types of dielectric metasurfaces, consisting of 3 × 3 regions, which manipulate wavefront by different feature heights. Both polarization-dependent and polarization-independent metasurfaces are realized for phase depth of 0 ∼ 2π
Externí odkaz:
https://doaj.org/article/4988aead0b834fb28b70216f23e3d63c
Autor:
Xu, Ru, Chen, Peng, Liu, Menghan, Zhou, Jing, Yang, Yunfei, Li, Yimeng, Ge, Cheng, Peng, Haocheng, Liu, Bin, Xie, Zili, Zhang, Rong, Zheng, Youdou
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness o
Externí odkaz:
http://arxiv.org/abs/2007.03163
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