Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Zheng, Sheng Chen"'
Publikováno v:
In Bioresource Technology July 2016 211:743-750
Autor:
Su, Jun feng, Shao, Si cheng, Huang, Ting lin, Ma, Fang, Yang, Shao fei, Zhou, Zhen ming, Zheng, Sheng chen
Publikováno v:
In Journal of Environmental Chemical Engineering September 2015 3(3):2187-2193
Autor:
Su, Jun feng, Zheng, Sheng Chen, Huang, Ting lin, Ma, Fang, Shao, Si Cheng, Yang, Shao Fei, Zhang, Li na
Publikováno v:
In Bioresource Technology September 2015 192:654-659
Autor:
Su, Jun Feng1,2 (AUTHOR) sjf1977518@sina.com, Zheng, Sheng Chen1 (AUTHOR), Huang, Ting Lin1 (AUTHOR), Ma, Fang2 (AUTHOR), Shao, Si Cheng1 (AUTHOR), Yang, Shao Fei1 (AUTHOR), Zhang, Li Na1 (AUTHOR)
Publikováno v:
Geomicrobiology Journal. 2016, Vol. 33 Issue 7, p586-591. 6p.
Publikováno v:
Applied Mechanics and Materials. 826:8-14
The modal analysis was carried out to investigate the proposed improved curvature based finite element method (ICFE) for parallel manipulator with flexible links. The flexible link was discretizatied with ICFE first, and with the proposed rigid-flexi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af3b21fb1468d0df30ce15929a0234f
https://doi.org/10.4028/www.scientific.net/amm.826.8
https://doi.org/10.4028/www.scientific.net/amm.826.8
Publikováno v:
Advanced Materials Research. :1456-1460
As the traditional implements of graph are complicated in data structure and hard to maintain, or short in storage utilization and low computational efficiency, this paper designs one storage model of graph based on variable collection according to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c7b0a9ef980cf4e3ef5c6cb27b81c7
https://doi.org/10.4028/www.scientific.net/amr.765-767.1456
https://doi.org/10.4028/www.scientific.net/amr.765-767.1456
Publikováno v:
Japanese Journal of Applied Physics. 56:04CP09
In this study, Ni-doped MoS2 was grown by chemical vapor transportation. Photoconductivity results reveal that Ni-doped MoS2 has an obvious doping level of 1.2 eV and an electrical conductivity of σ 9.92 × 10−7 S cm−1 at room temperature, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a08ff74011c7f63ed5af78302279f37
https://doi.org/10.7567/jjap.56.04cp09
https://doi.org/10.7567/jjap.56.04cp09
Akademický článek
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Publikováno v:
Japanese Journal of Applied Physics; Apr2017, Vol. 56 Issue 4S, p1-1, 1p