Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Zheng, Biyuan"'
Autor:
Chiout, Anis, Tempez, Agnès, Carlier, Thomas, Chaigneau, Marc, Cadiz, Fabian, Rowe, Alistair, Zheng, Biyuan, Pan, Anlian, Pala, Marco, Oehler, Fabrice, Ouerghi, Abdelkarim, Chaste, Julien
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical
Externí odkaz:
http://arxiv.org/abs/2402.03061
Autor:
Zribi, Jihene, Pierucci, Debora, Bisti, Federico, Zheng, Biyuan, Avila, Josse, Khalil, Lama, Ernandes, Cyrine, Chaste, Julien, Oehler, Fabrice, Pala, Marco, Maroutian, Thomas, Hermes, Ilka, Lhuillier, Emmanuel, Pan, Anlian, Ouerghi, Abdelkarim
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential devic
Externí odkaz:
http://arxiv.org/abs/2212.03248
Autor:
Yuan, Long, Zheng, Biyuan, Zhao, Qiuchen, Kempt, Roman, Brumme, Thomas, Kuc, Agnieszka Beata, Ma, Chao, Deng, Shibin, Pan, Anlian, Huang, Libai
Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafas
Externí odkaz:
http://arxiv.org/abs/2111.07887
Autor:
Wu, Guangcheng, Xiang, Li, Wang, Wenqiang, Yao, Chengdong, Yan, Zeyi, Zhang, Cheng, Wu, Jiaxin, Liu, Yong, Zheng, Biyuan, Liu, Huawei, Hu, Chengwei, Sun, Xingxia, Zhu, Chenguang, Wang, Yizhe, Xiong, Xiong, Wu, Yanqing, Gao, Liang, Li, Dong, Pan, Anlian, Li, Shengman
Publikováno v:
In Science Bulletin 26 February 2024 69(4):473-482
Autor:
Ernandes, Cyrine, Khalil, Lama, Almabrouk, Hela, Pierucci, Debora, Zheng, Biyuan, Avila, José, Dudin, Pave, Chaste, Julien, Oehler, Fabrice, Pala, Marco, Bisti, Federico, Brulé, Thibault, Lhuillier, Emmanuel, Pan, Anlian, Ouerghi, Abdelkarim
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for
Externí odkaz:
http://arxiv.org/abs/2011.12587
Akademický článek
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Autor:
Yuan, Long, Zheng, Biyuan, Kunstmann, Jens, Brumme, Thomas, Kuc, Agnieszka Beata, Ma, Chao, Deng, Shibin, Blach, Daria, Pan, Anlian, Huang, Libai
Publikováno v:
Nature Materials 19, 617-623 (2020)
The nanoscale periodic potentials introduced by moir\'{e} patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the local
Externí odkaz:
http://arxiv.org/abs/1910.02869
Akademický článek
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Autor:
Liu, Wenjing, Wang, Yuhui, Zheng, Biyuan, Hwang, Minsoo, Ji, Zhurun, Liu, Gerui, Li, Ziwei, Sorger, Volker J., Pan, Anlian, Agarwal, Ritesh
Two-dimensional semiconductors host excitons with very large oscillator strengths and binding energies due to significantly reduced carrier screening. Two-dimensional semiconductors integrated with optical cavities are emerging as a promising platfor
Externí odkaz:
http://arxiv.org/abs/1808.06554
Autor:
Liu, Wenjing, Wang, Yuhui, Naylor, Carl H., Lee, Bumsu, Zheng, Biyuan, Liu, Gerui, Johnson, A. T. Charlie, Pan, Anlian, Agarwal, Ritesh
We study exciton-plasmon coupling in two-dimensional semiconductors coupled with Ag plasmonic lattices via angle-resolved reflectance spectroscopy and by solving the equations of motion (EOMs) in a coupled oscillator model accounting for all the reso
Externí odkaz:
http://arxiv.org/abs/1706.08024